2N6790 [SEME-LAB]
N–CHANNEL POWER MOSFET; N沟道功率MOSFET
| 型号： | 2N6790 |
| 厂家： | 
SEME LAB |
| 描述： | N–CHANNEL POWER MOSFET |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6790
IRFF220
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
ENHANCEMENT MODE
4.06 (0.16)
4.57 (0.18)
0.89
(0.035)
max.
12.70
(0.500)
min.
FEATURES
0.41 (0.016)
0.53 (0.021)
dia.
• REPETITIVE AVALANCHE RATING
• SIMPLE DRIVE REQUIREMENTS
• HERMETICALLY SEALED
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.74 (0.029)
1.14 (0.045)
APPLICATIONS
• FAST SWITCHING
• MOTOR CONTROLS
• POWER SUPPLIES
0.71 (0.028)
0.53 (0.021)
45°
TO39 Package (TO-205AF)
Underside View
Pin 1 - Source
Pin 2 - Gate
Pin 3 - Drain and Case
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
V
Drain Source Voltage
200V
3.5A
DS
I
I
I
T
= 25°C
Continuous Drain Current
D
D
@ case
T
= 100°C
Continuous Drain Current
2.25A
@ case
1
Pulsed Drain Current
14A
DM
V
Gate Source Voltage
20V
GS
P @ T
= 25°C
Maximum Power Dissipation
20W
D
case
R
Thermal Resistance Junction To Case
Thermal Resistance Junction To Ambient
Operating and Storage Temperature Range
( 1.6mm from case for 10 secs)
6.25°C/W
175°C/W
-55 to +150°C
300°C
θJ-C
R
θJ-A
T T
J
stg
,
Lead Temperature
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 6445
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
2N6790
IRFF220
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter
Test Conditions
Min.
Typ.
Max. Unit
STATIC ELECTRICAL RATINGS
BV
V
Drain – Source Breakdown Voltage
* Gate Threshold Voltage
V
V
V
V
V
= 0
= V
I = 1.0mA
200
2.0
DSS
GS
DS
GS
GS
DS
D
V
I = 250μA
4.0
GS(th)
GSSF
GS
D
I
I
Gate Body Leakage Forward
Gate Body Leakage Reverse
= 20V
100
nA
= -20V
= 160V.
-100
GSSR
V
=0
25
GS
μA
I
Zero Gate Voltage Drain Current
DSS
T = 125°C
250
C
R
* Static Drain Source On-State
Resistance
V
V
V
= 10V
= 10V
= 15V
I = 2.25A
0.80
DS(on)
GS
GS
DS
D
Ω
I = 3.5A
0.92
Ω
D
S ( )
gfs*
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
I
= 2.25A
1.5
DS
C
C
C
V
= 0
V = 25V
DS
260
100
30
iss
oss
rss
d(on)
r
GS
pF
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
t
t
t
t
V
= 100V
I = 3.5A
40
DD
D
R = 7.5Ω
50
G
ns
Turn–Off Delay Time
Fall Time
(MOSFET switching times are essentially
50
50
d(off)
f
independent of operating temperature.)
Q
Q
Q
Total Gate Charge
V
V
= 10V
I = 3.5A
8.0
0.9
2.3
14.3
GS
D
g
nC
Gate To Source Charge
Gate To Drain (“Miller”) Charge
= 100V
3.0
9.0
DS
gs
gd
BODY– DRAIN DIODE RATINGS & CHARACTERISTICS
V
A
V
D
Continuous Source Current (Body
Diode)
Modified MOS POWER
symbol showing the intergal
P-N junction rectifier.
I
I
3.5
14
S
G
Source Current (Body Diode)
S
SM
I = 3.5A
V
= 0
GS
S
*
V
Diode Forward Voltage
1.5
SD
T = 25°C
J
t
Reverse Recovery Time
Reverse Recovery Charge
I = 3.5A
T = 25°C
400
4.3
ns
rr
F
J
Q
d / d = 100A/μs V
= 50V
μC
RR
i
t
DD
Notes
* Pulse Test: Pulse Width ≤ 300μs, δ ≤ 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 6445
Issue 1
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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