2N6790 [FAIRCHILD]
3.5A, 200V, 0.800 Ohm, N-Channel Power; 3.5A ， 200V ， 0.800 Ohm的N通道功率
| 型号： | 2N6790 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 3.5A, 200V, 0.800 Ohm, N-Channel Power |
| 文件： | 总7页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6790
Data Sheet
December 2001
3.5A, 200V, 0.800 Ohm, N-Channel Power
MOSFET
Features
• 3.5A, 200V
The 2N6790 is an N-Channel enhancement mode silicon
gate power MOS field effect transistor designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. This device can be operated directly
from an integrated circuit.
• r = 0.800Ω
DS(ON)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Ordering Information
• Related Literature
PART NUMBER
PACKAGE
BRAND
2N6790
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
2N6790
TO-205AF
NOTE: When ordering, include the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
SOURCE
GATE
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. B
2N6790
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
2N6790
200
200
3.5
2.25
14
20
3.5
14
20
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
V
V
A
A
A
V
A
A
W
DS
Drain to Gate Voltage (R
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
D
o
T
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulse Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
o
o
Above T = 25 C, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.16
-55 to 150
W/ C
C
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
C
J
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
o
o
300
260
C
C
L
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 0.25mA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
I
200
-
DSS
GS(TH)
D
GS
= V , I = 1.0mA
V
V
V
V
V
2
-
4
V
GS
DS
DS
GS
DS D
Zero-Gate Voltage Drain Current
I
= 200V, V
= 0V
= 0V
= 0
-
-
250
1000
100
2.8
0.800
1.5
1.5
4.5
600
300
80
µA
µA
nA
V
DSS
GS
GS
DS
o
= 160V, V
T
T
= 125 C
-
-
-
C
C
Gate to Source Leakage Current
I
=
20V, V
-
GSS
Drain to Source On-Voltage (Note 2)
Drain to Source On Resistance
V
I
I
I
I
I
= 3.5A, V
GS
= 10V
-
-
DS(ON)
D
D
D
S
D
r
= 2.25A, V
= 10V
= 10V
-
.5
Ω
DS(ON)
GS
GS
o
= 2.25A, V
= 125 C
-
-
Ω
Diode Forward Voltage
Forward Transconductance (Note 2)
Input Capacitance
V
= 3.5A, V
GS
= 0V
0.7
1.5
200
60
15
-
-
V
SD
g
= 2.25A, V
= 5V
2.25
S
fs
DS
C
V
= 0V, V
DS
= 25V
450
pF
pF
pF
ns
ns
ns
ns
W
ISS
GS
f = 1MHz
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
C
150
OSS
RSS
C
40
-
t
I
= 2.25A
40
d(ON)
D
V
≅ 74V, R = 50Ω
G
GS
t
-
-
50
r
Turn-Off Delay Time
Fall Time
t
-
-
50
d(OFF)
t
-
-
50
f
Safe Operating Area
SOA
V
V
= 160V, I = 125mA
20
20
-
-
-
DS
DS
D
= 5.7V, I = 3.5A
-
-
W
D
o
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
-
6.25
175
C/W
θJC
o
Free Air Operation
-
-
C/W
θJA
Source to Drain Diode Specifications
PARAMETER
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
MIN
TYP
350
2.3
MAX
UNITS
ns
o
t
T = 150 C, I
J
= 3.5A, dl /dt = 100A/µs
SD
-
-
rr
SD
o
Reverse Recovered Charge
NOTES:
Q
TJ = 150 C, I
= 3.5A, dl /dt = 100A/µs
SD
µC
RR
SD
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. B
2N6790
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
5
4
3
0.6
0.4
2
1
0
0.2
0
25
50
75
100
125
150
0
25
50
75
100
125
150
o
o
T
, CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1.0
0.5
0.2
P
DM
0.1
0.1
t
1
0.05
t
2
NOTES:
DUTY FACTOR: D = t /t
0.02
0.01
1
2
PEAK T = P
J
x Z
θJC
x Z
x R + T
θJC C
SINGLE PULSE
-4
DM
θJC
0.01
-5
10
-3
10
-2
10
10
0.1
1
10
T , RECTANGULAR PULSE DURATION (s)
1
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
50
8V
10V
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
12
8
80µs PULSE TEST
10µs
10
1
7V
100µs
1.0ms
V
= 6V
GS
10ms
4
5V
100ms
o
T
T
= 25 C
C
J
= MAX RATED
DC
0.1
4V
SINGLE PULSE
0
0.05
0
25
50
75
100
1
10
100
1000
V
, DRAIN TO SOURCE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
DS
FIGURE 4. FORWARD BIAS SAFE OPERATING AREAS
FIGURE 5. OUTPUT CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. B
2N6790
Typical Performance Curves Unless Otherwise Specified (Continued)
12
16
12
8
o
V
> I
D(ON)
x r MAX
DS(ON)
80µs PULSE TEST
25 C
10V
9V
8V
DS
o
-55 C
80µs PULSE TEST
V
= 7V
o
GS
8
125 C
6V
4
5V
4V
4
0
0
2
4
6
8
0
2
4
6
8
10
V
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
DS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
1.5
1.0
0.5
0
2.2
1.8
1.4
1.0
0.6
0.2
PULSE DURATION = 2.0µs
I
= 2A
D
o
INITIAL T = 25 C
J
V
= 10V
GS
V
= 10V
GS
V
= 20V
GS
0
5
10
I , DRAIN CURRENT (A)
15
20
-40
0
40
80
120
150
o
T , JUNCTION TEMPERATURE ( C)
D
J
FIGURE 8. DRAINTO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAINTO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
1.15
1.05
0.95
1000
800
600
400
200
0
V
= 0V, f = 1MHz
GS
ISS
C
C
C
= C
+ C
GS
GD
= C
GD
RSS
OSS
= C
+ C
GD
DS
C
ISS
0.85
0.75
C
OSS
C
RSS
-40
0
40
80
120
160
0
10
20
, DRAIN TO SOURCE VOLTAGE (V)
DS
30
40
50
o
T , JUNCTION TEMPERATURE ( C)
V
J
FIGURE 10. NORMALIZED DRAINTO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. B
2N6790
Typical Performance Curves Unless Otherwise Specified (Continued)
2
5.0
4.25
3.75
10
o
T
= -55 C
80µs PULSE TEST
J
o
T
= 25 C
J
o
T
= 25 C
J
o
T
= 150 C
J
o
T
= 125 C
3.0
2.25
1.50
J
10
o
T
= 150 C
J
0.75
0
o
T
= 25 C
J
1
0
2
4
6
8
10
12
14
0
1
2
3
4
I , DRAIN CURRENT (A)
V
, SOURCE TO DRAIN VOLTAGE (V)
D
SD
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I
= 7A
D
V
= 160V
= 100V
= 40V
DS
15
10
V
DS
V
DS
5
0
0
4
8
12
16
20
Q ,TOTAL GATE CHARGE (nC)
g
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. B
2N6790
Test Circuits and Waveforms
V
DS
BV
DSS
L
t
P
V
DS
I
VARY t TO OBTAIN
P
AS
+
-
V
DD
R
REQUIRED PEAK I
AS
G
V
DD
V
GS
DUT
t
P
I
AS
0V
0
0.01Ω
t
AV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
+
V
DD
10%
10%
R
G
0
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
SAME TYPE
AS DUT
g(TOT)
V
GS
12V
BATTERY
0.2µF
Q
gd
50kΩ
0.3µF
Q
gs
D
S
V
DS
G
DUT
0
0
I
G(REF)
0
V
I
DS
G(REF)
I
CURRENT
SAMPLING
RESISTOR
I
CURRENT
SAMPLING
RESISTOR
G
D
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. B
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not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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