2N6788U [MICROSEMI]
N-CHANNEL MOSFET; N沟道MOSFET
| 型号： | 2N6788U |
| 厂家： | 
Microsemi |
| 描述： | N-CHANNEL MOSFET |
| 文件： | 总4页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/555
DEVICES
LEVELS
2N6788
2N6788U
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Drain – Source Voltage
Gate – Source Voltage
Symbol
VDS
Value
100
Unit
Vdc
Vdc
VGS
± 20
Continuous Drain Current
TC = +25°C
2N6788
2N3788U
6.0
4.5
ID1
ID2
Ptl
Adc
Adc
W
Continuous Drain Current
TC = +100°C
2N6788
2N3788U
3.5
2.8
2N6788
2N3788U
20 (1)
14
Max. Power Dissipation
TO-205AF
(formerly TO-39)
Drain to Source On State Resistance
Operating & Storage Temperature
Rds(on)
0.30 (2)
Ω
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 0.16 W/°C (2N6788); 0.11 W/°C (2N6788U) for TC > +25°C
(2) VGS = 10Vdc, ID = 3.5A (2N6788), 2.8A (2N6788U)
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol Min. Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
100
Vdc
Vdc
U – 18 LCC
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
DS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
Gate Current
VGS = ±20V, VDS = 0V
IGSS1
IGSS2
±100
±200
nAdc
V
GS = ±20V, VDS = 0V, Tj = +125°C
T4-LDS-0164 Rev. 1 (100553)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Drain Current
V
GS = 0V, VDS = 80V
IDSS1
IDSS2
25
0.25
µAdc
mAdc
VGS = 0V, VDS = 80V, Tj = +125°C
Static Drain-Source On-State Resistance
VGS = 10V, ID = 3.5A pulsed
2N6788
2N3788U
rDS(on)1
rDS(on)2
0.30
0.35
Ω
Ω
V
GS = 10V, ID = 2.8A pulsed
VGS = 10V, ID = 6.0A pulsed
GS = 10V, ID = 4.5A pulsed
Tj = +125°C
2N6788
2N3788U
V
V
V
GS = 10V, ID = 3.5A pulsed
GS = 10V, ID = 2.8A pulsed
2N6788
2N3788U
rDS(on)3
0.54
1.8
Ω
Diode Forward Voltage
VGS = 0V, ID = 6.0A pulsed
VGS = 0V, ID = 4.5A pulsed
2N6788
2N3788U
VSD
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VDS = 50V
GS = 10V, ID = 6.0A
VGS = 10V, ID = 4.5A
Qg(on)
Qgs
Qgd
18.0
4.0
9.0
nC
V
2N6788
2N3788U
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Switching time tests:
ID = 6.0A, VGS = 10Vdc
ID = 4.5A, VGS = 10Vdc
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
2N6788
2N3788U
td(on)
tr
td(off)
tf
40
70
40
70
ns
Gate drive impedance = 7.5Ω,
V
DD = 35Vdc
di/dt ≤ 100A/µs, VDD ≤ 50V,
IF = 6.0A
IF = 4.5A
Diode Reverse Recovery Time
trr
240
ns
2N6788
2N3788U
T4-LDS-0164 Rev. 1 (100553)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PACKAGE DIMENSIONS
Dimensions
Millimeters
Ltr
Inches
Min
Notes
Max
.355
.180
.370
.041
.034
.045
.021
.750
Min
7.75
4.07
8.51
0.23
0.72
0.74
0.41
12.7
Max
9.02
4.57
9.39
1.04
0.86
1.14
0.53
19.05
CD
CH
HD
h
.305
.160
.335
.009
.028
.029
.016
.500
J
2
3
k
LD
LL
LS
LU
L1
L2
P
7, 8
7, 8
6
.200 TP
5.08 TP
.016
.019
.050
0.41
0.48
1.27
7, 8
7, 8
7, 8
5
.250
.070
6.35
1.78
Q
.050
.010
1.27
0.25
4
r
9
α
45° TP
45° TP
6
NOTES:
1
2
3
4
5
6
Dimensions are in inches. Millimeters are given for general information only.
Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm).
Dimension k measured from maximum HD.
Outline in this zone is not controlled.
Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of
true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7
LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8
9
All three leads.
Radius (r) applies to both inside corners of tab.
10 Drain is electrically connected to the case.
11 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 1- Physical dimensions for TO-205AF.
T4-LDS-0164 Rev. 1 (100553)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NOTES:
Dimensions
1
2
3
Dimensions are in inches.
Ltr
Inches
Min
Millimeters
Min Max
Millimeters are given for general information only.
In accordance with ASME Y14.5M, diameters are equivalent to
φx symbology.
Max
.360
.295
.115
.055
.065
BL
BW
CH
LL1
LL2
LS
.345
.280
.095
.040
.055
8.77
7.11
2.41
1.02
1.40
4
Ceramic package only.
.050 BSC
1.27 BSC
LS1
LS2
LW
Q1
.025 BSC
.008 BSC
0.635 BSC
0.203 BSC
.020
.030
0.51
0.76
.105 REF
.120 REF
2.67 REF
3.05 REF
Q2
Q3
TL
TW
.045
.070
.120
.055
.080
.130
1.14
1.78
3.05
1.40
2.03
3.30
* FIGURE 2 - Physical dimensions for LCC.
T4-LDS-0164 Rev. 1 (100553)
Page 4 of 4
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