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2N5152 [SEME-LAB]

HIGH SPEED MEDIUM VOLTAGE SWITCHES; 高速中压开关
2N5152
型号： 2N5152
厂家： SEME LAB    SEME LAB
描述：

HIGH SPEED MEDIUM VOLTAGE SWITCHES
高速中压开关

开关
文件： 总3页 (文件大小：27K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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2N5152  
2N5154  
MECHANICAL DATA  
Dimensions in mm (inches)  
HIGH SPEED  
MEDIUM VOLTAGE  
SWITCHES  
8
.
8
9
(
0
.
3
5
)
9
.
4
0
(
0
.
3
7
)
7
8
.
.
7
5
5
1
(
(
0
0
.
.
3
3
0
3
5
5
)
)
5
.
0
8
(
0
.
2
0
0
)
t
y
p
.
DESCRIPTION  
2
.
6
6
.
.
1
6
0
0
(
(
0
0
.
.
2
2
4
6
0
0
)
)
2
(
0
.
1
3
0
1
.
.
6
1
6
4
(
(
0
0
.
.
0
0
2
4
6
5
)
)
The 2N5152 and the 2N5154 are silicon  
expitaxial planar NPN transistors in jedec  
TO-39 metal case intended for use in  
switching applications.  
0
0
.
.
7
8
1
6
(
(
0
0
.
.
0
0
2
3
8
4
)
)
0
.
8
9
a
m
x
.
)
(
0
0
.
0
3
5
1
2
.
7
(
0
.
5
0
0
)
m
i
n
.
7
8
.
.
7
5
5
1
(
(
0
0
.
.
3
3
0
3
5
5
)
)
d
i
a
.
4
5
°
The complementary PNP types are the  
2N5151 and 2N5153 respectively  
TO-39  
Pin 1 – Emitter  
Pin 2 – Base  
Pin 3 – Collector  
ABSOLUTE MAXIMUM RATINGS  
(T  
= 25°C unless otherwise stated)  
CASE  
2N5152  
2N5154  
V
V
V
Collector – Base Voltage (I = 0)  
100V  
80V  
6V  
CBO  
CEO  
EBO  
E
Collector – Emitter Voltage (I = 0)  
B
Emitter – Base Voltage (I = 0)  
C
I
I
I
Continuous Collector Current  
Peak Collector Current  
Base Current  
5A  
C
10A  
1A  
C(PK)  
B
P
Total Dissipation at T  
= 25°C  
= 50°C  
= 100°C  
1W  
tot  
case  
case  
case  
T
T
10W  
6.7W  
T
T
Operating and Storage Temperature Range  
Junction temperature  
–65 to +200°C  
200°C  
stg  
j
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 3/99  
2N5152  
2N5154  
ELECTRICAL CHARACTERISTICS FOR 2N5152 (T  
= 25°C unless otherwise stated)  
case  
Parameter  
Test Conditions  
Min.  
Typ.  
Max. Unit  
µA  
V
V
V
V
V
V
V
= 60V  
= 100V  
= 60V  
=- 2V  
= 40V  
= 5V  
V
= 0  
= 0  
1
CE  
CE  
CE  
BE  
CE  
EB  
EB  
BE  
I
Collector Cut Off Current  
CES  
mA  
V
1
BE  
T
= 150°C  
case  
I
I
I
Collector Cut Off Current  
500  
CEV  
CEO  
EBO  
µA  
Collector Cut Off Current  
I = 0  
50  
1
B
µA  
I = 0  
C
Emitter Cut Off Current  
mA  
= 6V  
I = 0  
1
C
V
V
Collector Emitter Saturation Voltage  
Collector Emitter Saturation Voltage  
I = 100mA  
I = 0  
80  
CEO(SUS)  
CE(sat)  
C
B
I = 2.5A  
I = 250mA  
0.75  
1.5  
C
B
I = 5A  
I = 500mA  
B
C
V
I = 2.5A  
I = 250mA  
1.45  
2.2  
C
B
V
V
Base Emitter Saturation Voltage  
Base Emitter Voltage  
BE(sat)  
BE  
I = 5A  
I = 500mA  
B
C
I = 2.5A  
V
V
V
V
= 5V  
= 5V  
= 5V  
= 5v  
1.45  
C
CE  
CE  
CE  
CE  
I = 50mA  
20  
30  
20  
C
h
DC Current Gain  
FE  
I = 2.5A  
90  
C
I = 5A  
C
T
= -55°C  
case  
I =2.5A  
V
V
= 5V  
15  
C
CE  
I = 0  
= 10V  
E
CB  
pF  
C
Collector Base Capacitance  
Small Signal Current Gain  
250  
CBO  
f = 1MHz  
h
I = 0.1A  
V
V
V
V
= 5V  
= 5v  
FE  
C
CE  
CE  
CC  
CC  
20  
3
f = 1KHz  
I = 0.5A  
C
f = 20MHz  
I = 5A  
= 30v  
= 30V  
C
µs  
µs  
t
t
Turn On Time  
Turn Off Time  
0.5  
1.3  
on  
I
= 0.5A  
B1  
I = 5A  
C
off  
I
=-I = 0.5A  
B1 B2  
* Pulse test t = 300 s , < 2%  
p
THERMAL DATA  
R
15  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max  
Max  
°C/W  
°C/W  
thj-case  
thj-amb  
R
175  
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 3/99  
2N5152  
2N5154  
ELECTRICAL CHARACTERISTICS FOR 2N5154 (T  
= 25°C unless otherwise stated)  
case  
Parameter  
Test Conditions  
Min.  
Typ.  
Max. Unit  
V
V
V
V
V
V
V
= 60V  
= 100V  
= 60V  
= -2V  
= 40V  
= 5V  
V
= 0  
= 0  
1
µA  
CE  
CE  
CE  
BE  
CE  
EB  
EB  
BE  
I
Collector Cut Off Current  
CES  
V
1
mA  
BE  
T
= 150°C  
case  
I
I
I
Collector Cut Off Current  
500  
CEV  
CEO  
EBO  
µA  
Collector Cut Off Current  
I = 0  
50  
1
B
I = 0  
µA  
C
Emitter Cut Off Current  
= 6V  
I = 0  
1
mA  
C
V
V
Collector Emitter Saturation Voltage  
Collector Emitter Saturation Voltage  
I = 100mA  
I = 0  
80  
CEO(SUS)  
CE(sat)  
C
B
I = 2.5A  
I = 250mA  
0.75  
1.5  
C
B
I = 5A  
I = 500mA  
B
C
V
I = 2.5A  
I = 250mA  
1.45  
2.2  
C
B
V
V
Base Emitter Saturation Voltage  
Base Emitter Voltage  
BE(sat)  
BE  
I = 5A  
I = 500mA  
B
C
I = 2.5A  
V
V
V
V
= 5V  
= 5V  
= 5V  
= 5v  
1.45  
C
CE  
CE  
CE  
CE  
I = 50mA  
50  
70  
40  
C
h
DC Current Gain  
FE  
I = 2.5A  
200  
C
I = 5A  
C
T
= -55°C  
case  
I =2.5A  
V
V
= 5V  
35  
C
CE  
I = 0  
= 10V  
E
CB  
C
Collector Base Capacitance  
Small Signal Current Gain  
250  
pF  
CBO  
f = 1MHz  
h
I = 0.1A  
V
V
V
V
= 5V  
= 5v  
FE  
C
CE  
CE  
CC  
CC  
50  
f = 1KHz  
I = 0.5A  
C
3.5  
f = 20MHz  
I = 5A  
= 30v  
= 30V  
C
t
t
Turn On Time  
Turn Off Time  
0.5  
1.3  
µs  
µs  
on  
I
= 0.5A  
B1  
I = 5A  
C
off  
I
=-I = 0.5A  
B1 B2  
* Pulse test t = 300 s , < 2%  
p
THERMAL DATA  
R
15  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max  
Max  
°C/W  
°C/W  
thj-case  
thj-amb  
R
175  
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 3/99  

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