2N5152_02 [SEMICOA]
Silicon PNP Transistor; 硅PNP晶体管
| 型号： | 2N5152_02 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Silicon PNP Transistor |
| 文件： | 总2页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5152
Data Sheet
Description
Applications
• High-speed power switching
• Low power
Semicoa Semiconductors offers:
• PNP silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5152J)
• JANTX level (2N5152JX),
• JANTXV level (2N5152JV)
• JANS level (2N5152JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Features
• Radiation testing (total dose) upon request
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 9701
• Reference document:
MIL-PRF-19500/544
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
VCEO
VCBO
Rating
80
100
Unit
Volts
Volts
Volts
A
VEBO
IC
5.5
Collector Current, Continuous
2
Power Dissipation, TA = 25OC
Derate linearly above 25OC
Power Dissipation, TC = 25OC
Derate linearly above 25OC
1
W
PT
5.7
mW/°C
W
11.8
PT
66.7
mW/°C
RθJA
175
15
°C/W
Thermal Resistance
RθJC
TJ
Operating Junction Temperature
Storage Temperature
-65 to + 200
°C
TSTG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5152
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Cutoff Current
Symbol
V(BR)CEO IC = 100 mA
ICEO VCE = 40 Volts
ICEX
Test Conditions
Min
80
Typ
Max
Units
Volts
50
µA
µA
V
CE = 60 Volts, VEB = 2 Volts,
TA = 150°C
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
500
ICES1
ICES2
IEBO1
IEBO2
VCE = 60 Volts
1
1
1
1
µA
mA
µA
mA
V
CE = 100 Volts
VEB = 4 Volts
EB = 5.5 Volts
V
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
IC = 50 mA, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
TA = -55°C
hFE1
hFE2
hFE3
hFE4
20
30
20
15
90
DC Current Gain
Volts
Volts
Base-Emitter Voltage
VBE
VCE = 5 Volts, IC = 2.5 A
1.45
VBEsat1
VBEsat2
VCEsat1
VCEsat2
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
1.45
2.20
0.75
1.50
Base-Emitter Saturation Voltage
Volts
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Symbol
Test Conditions
Min
Typ
Max
Units
VCE = 5 Volts, IC = 500 mA,
f = 10 MHz
|hFE|
6
V
CE = 5 Volts, IC = 100 mA,
hFE
20
f = 1 kHz
V
CB = 10 Volts, IE = 0 mA,
pF
Open Circuit Output Capacitance
COBO
250
f = 1 MHz
Switching Characteristics
Storage Time
ts
tf
1.4
0.5
0.5
1.5
IC = 5 A, IB1=IB2 = 500 mA,
VBEoff = 3.7 Volts, RL = 6 Ω
Fall Time
µs
Saturated Turn-On Time
Saturated Turn-Off Time
tON
tOFF
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
相关型号：
2N5153
Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
ASI
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