2N5152_1 [MICROSEMI]
NPN POWER SILICON TRANSISTOR; NPN功率硅晶体管
| 型号： | 2N5152_1 |
| 厂家： | 
Microsemi |
| 描述： | NPN POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
DEVICES
LEVELS
JAN
JANTX
JANTXV
JANS
2N5152
2N5152L
2N5152U3 2N5154U3
2N5154
2N5154L
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
80
100
5.5
2.0
Vdc
Vdc
Vdc
Adc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation (1)
@ TA = +25°C
@ TC = +25°C
1.0
10
PT
W
TO-5
2N5152L, 2N5154L
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Case (1)
TJ , Tstg
RθJC
-65 to +200
°C
10
1.7 (U3)
°C/W
Note:
1) See 19500/544 for thermal derating curves.
2) This value applies for PW ≤ 8.3ms, duty cycle ≤ 1%.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
TO-39 (TO-205AD)
2N5152, 2N5154
Collector-Emitter Breakdown Voltage
IC = 100mAdc, IB = 0
V(BR)CEO
80
Vdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc, IC = 0
IEBO
1.0
1.0
µAdc
mAdc
VEB = 5.5Vdc, IC = 0
Collector-Emitter Cutoff Current
VCE = 60Vdc, VBE = 0
ICES
1.0
1.0
µAdc
mAdc
VCE = 100Vdc, VBE = 0
Collector-Emitter Cutoff Current
ICEO
50
µAdc
VCE = 40Vdc, IB = 0
ON CHARACTERTICS
Forward-Current Transfer Ratio
IC = 50mAdc, VCE = 5Vdc
U-3
20
50
30
70
---
---
90
2N5152
2N5154
2N5152
2N5154
2N5152U3, 2N5154U3
hFE
IC = 2.5Adc, VCE = 5Vdc
200
T4-LDS-0039 Rev. 1 (080797)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
IC = 5Adc, VCE = 5Vdc
Symbol
Min.
Max.
Unit
2N5152
2N5154
20
40
hFE
Collector-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc
0.75
1.5
VCE(sat)
Vdc
Vdc
Vdc
Base-Emitter Voltage Non-Saturation
IC = 2.5Adc, VCE = 5Vdc
VBE
1.45
Base-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc
1.45
2.2
VBE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500mAdc, VCE = 5Vdc, f = 10MHz
2N5152
2N5154
6
7
|hfe|
Small-signal short Circuit Forward-Current Transfer Ratio
IC = 100mAdc, VCE = 5Vdc, f = 1KHz
hfe
2N5152
2N5154
20
50
Output Capacitance
Cobo
250
pF
VCB = 10Vdc, IE = 0, f = 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
IC = 5Adc, IB1 = 500mAdc
ton
0.5
μs
Turn-Off Time
RL = 6Ω
toff
1.5
1.4
0.5
μs
Storage Time
Fall Time
IB2 = -500mAdc
ts
tf
μs
μs
VBE(OFF) = 3.7Vdc
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, tP = 1.0s
Test 1
VCE = 5.0Vdc, IC = 2.0Adc
Test 2
VCE = 32Vdc, IC = 310mAdc
Test 3
VCE = 80Vdc, IC = 12.5mAdc
T4-LDS-0039 Rev. 1 (080797)
Page 2 of 2
相关型号：
2N5153
Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
ASI
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