2N5152L [SEMICOA]
Type 2N5152L Geometry 9201 Polarity NPN; 键入2N5152L几何9201极性NPN
| 型号： | 2N5152L |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Type 2N5152L Geometry 9201 Polarity NPN |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. 2N5152L
Ge ne ric Pa rt Numbe r:
2N5152L
Type 2N5152L
Geometry 9201
Polarity NPN
Qual Level: JAN - JANS
REF: MIL-PRF-19500/544
Features:
·
Silicon power transistor for use in
high speed switching applications.
·
·
Housed in a TO-5 case.
Also available in chip form using
the 9201 chip geometry.
·
The Min and Max limits shown are
per MIL-PRF-19500/544 which
Semicoa meets in all cases.
TO-5
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
80
V
VCBO
VEBO
IC
Collector-Base Voltage
Emitter-Base Voltage
100
5.5
2
V
V
Collector Current, Continuous
A
Collector Current, PW < 8.3 ms, < 1% duty cycle
IC
10
15
A
Reverse Pulse Energy
mJ
Power Disipation TA = 25oC ambient
Derate above 25oC
1.0
5.7
Watt
PT
TJ
mW/oC
oC
Operating Junction Temperature
Storage Temperature
-65 to +200
-65 to +200
oC
TSTG
Data Sheet No. 2N5152L
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 100 mA, IB = 0, pulsed
V(BR)CBO
80
---
V
Base-Emitter Cutoff Current
VEB = 4 V, IC = 0
IEBO1
IEBO2
---
---
1.0
1.0
µA
VEB = 5.5 V, IC = 0
Collector-Emitter Cutoff Current
VCE = 60 V, VBE = 0
mA
ICES1
ICES2
ICEO
ICEX
---
---
---
---
1.0
1.0
50
µA
mA
µA
VCE = 100 V, VBE = 0
VCE = 40 V, IB = 0
VCE = 60 V, VBE = -2 V, TC = 150oC
500
µA
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 50 mA, VCE = 5 V
hFE1
hFE2
hFE3
hFE4
20
30
20
15
---
90
---
---
---
---
---
---
IC = 2.5 A, VCE = 5 V, pulsed
IC = 5.0 A, VCE = 5 V, pulsed
IC = 2.55 A, VCE = 5 V pulsed, TC = -55oC
Base-Emitter Voltage, Nonsaturted
VCE = 5 V, IC = 2.5 A, pulsed
VBE
---
1.45
V dc
Base-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA, pulsed
IC = 5 A, IB = 500 mA, pulsed
VBE(sat)1
VBE(sat)2
---
---
1.45
2.2
V dc
V dc
Collector-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA, pulsed
IC = 5 A, IB = 500 mA, pulsed
VCE(sat)1
VCE(sat)2
---
---
0.75
1.5
V dc
V dc
Small Signal Characteristics
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 5 V, IC = 500 mA, f = 10 MHz
Symbol
Min
Max
Unit
|hfe|
6.0
---
---
Common Emitter, Small Signal Short Circuit
Forward Current Transfer Ratio
h
20
---
---
---
fe
VCE = 5 V, IC = 100 mA, f = 1 kHz
Open Circuit Output Capacitance
COBO
250
pF
VCB = 10 V, IE = 0, f = 1 MHz
Switching Time
Delay Time
IC = 5 A, IB1 = 500 mA
Storage Time
Symbol
Min
Max
Unit
tON
---
0.5
µs
ts
tf
---
---
---
1.4
0.5
1.5
µs
µs
µs
IB2 = -500 mA
Fall Time
VBE(off) = 3.7 V
Turn-Off Time
RL = 6 ohms
tOFF
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