2N4912 [SEME-LAB]
SILICON EPITAXIAL NPN TRANSISTOR; 硅外延NPN晶体管
| 型号： | 2N4912 |
| 厂家： | 
SEME LAB |
| 描述： | SILICON EPITAXIAL NPN TRANSISTOR |
| 文件： | 总3页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON EPITAXIAL
NPN TRANSISTOR
2N4912
• Low Saturation Voltage Transistor
In A Hermetic Metal Package
• Designed For Driver Circuits, Switching
and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
C
V
V
V
I
Collector - Base Voltage
Collector - Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
80V
80V
CBO
CEO
EBO
5V
1.0A
C
I
1.0A
B
P
T = 25°C
c
Total Power Dissipation at
25W
D
Derate Above 25°C
0.143W/°C
-65 to +200°C
-65 to +200°C
T
Junction Temperature Range
Storage Temperature Range
J
T
stg
THERMAL PROPERTIES
Symbols Parameters
Min. Typ. Max. Units
R
Thermal Resistance, Junction To Case
7
°C/W
θJC
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 8104
Issue 1
SILICON EPITAXIAL
NPN TRANSISTOR
2N4912
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
C
Symbols Parameters
Collector-Emitter
Test Conditions
Min. Typ. Max. Units
V
*
I
= 10mA
I = 0
B
80
V
(BR)CEO
C
Breakdown Voltage
Collector-Emitter Cut-Off
Current
I
V
= 40V
I = 0
B
0.5
0.1
CEO
CE
V
V
= 80V
= 80V
V
V
T
= -1.5V
CE
BE
Collector-Emitter Cut-Off
Current
I
= -1.5V
CEX
CE
BE
1.0
1.0
mA
= 150°C
C
Emitter-Base Cut-Off
Current
Collector-Base Cut-Off
Current
I
I
V
= 5V
I
= 0
EBO
EB
C
V
I
= 80V
I = 0
E
0.1
1.3
0.6
CBO
CB
V
V
*
= 1.0A
V
= 1.0V
Base-Emitter Voltage
BE
C
CE
Collector-Emitter
Saturation Voltage
Base-Emitter Saturated
Voltage
*
I
I
= 1.0A
= 1.0A
I = 100mA
B
CE(sat)
C
C
V
V
*
I = 100mA
B
1.3
BE(sat)
I
I
I
= 50mA
= 500mA
= 1.0A
V
V
V
= 1.0V
= 1.0V
= 1.0V
40
20
10
C
C
C
CE
CE
CE
Forward-current transfer
ratio
h
*
100
FE
DYNAMIC CHARACTERISTICS
I
= 250mA
V
V
V
= 10V
= 10V
= 10V
C
CE
CE
CB
f
Transition Frequency
Small-Signal Current Gain
Output Capacitance
3.0
25
22
70
45
MHz
T
f = 1.0MHz
I
= 250mA
C
h
fe
f = 1.0KHz
I = 0
E
C
100
pF
obo
f = 1.0MHz
* Pulse Test: t = 300us, δ ≤ 2%
p
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Document Number 8104
Issue 1
Email: sales@semelab.co.uk Website: http://www.semelab.co.uk
SILICON EPITAXIAL
NPN TRANSISTOR
2N4912
Mechanical Data
Dimensions in mm (inches)
6.35 (0.250)
8.64 (0.340)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
1
2
1.27 (0.050)
1.91 (0.750)
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
TO66 (TO-213AA)
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Document Number 8104
Issue 1
Email: sales@semelab.co.uk Website: http://www.semelab.co.uk
相关型号：
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Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
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