2N4913 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2N4913
型号: 2N4913
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:112K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N4913 2N4914 2N4915  
DESCRIPTION  
·With TO-3 package  
·Complement to type 2N4904/4905/4906  
·Low collector saturation voltage  
APPLICATIONS  
·For general–purpose switching  
and power amplifier applications.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2N4913  
2N4914  
2N4915  
2N4913  
2N4914  
2N4915  
40  
60  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
40  
VCEO  
Collector-emitter voltage  
Open base  
V
60  
80  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
A
W
5
IB  
Base current  
1
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
87.5  
150  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
2.0  
/W  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N4913 2N4914 2N4915  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
40  
TYP.  
MAX  
UNIT  
2N4913  
2N4914  
2N4915  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=0.2A ;IB=0  
60  
V
80  
VCEsat-1  
VCEsat-2  
VBE  
Collector-emitter saturation voltage IC=2.5A; IB=0.25A  
Collector-emitter saturation voltage IC=5A ;IB=1A  
1.0  
1.5  
1.4  
1.0  
1.0  
V
V
Base-emitter on voltage  
Collector cut-off current  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
IC=2.5A ; VCE=2V  
V
ICEO  
VCE=Rated VCEO; IB=0  
VCB=Rated VCBO; IE=0  
mA  
mA  
mA  
mA  
ICBO  
VCE= Rated VCEO; VBE(off)=1.5V  
TC=150ꢀ  
1.0  
2.0  
ICEV  
IEBO  
VEB=5V; IC=0  
1.0  
hFE-1  
hFE-2  
fT  
IC=2.5A ; VCE=2V  
IC=5A ; VCE=2V  
25  
7
100  
DC current gain  
Transition frequency  
IC=1A ; VCE=10V;f=1.0MHz  
4
MHz  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N4913 2N4914 2N4915  
PACKAGE OUTLINE  
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)  
3

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