2N4913 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管![2N4913](http://pdffile.icpdf.com/pdf1/p00152/img/icpdf/2N4913_844711_icpdf.jpg)
型号: | 2N4913 |
厂家: | ![]() |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:112K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N4913 2N4914 2N4915
DESCRIPTION
·With TO-3 package
·Complement to type 2N4904/4905/4906
·Low collector saturation voltage
APPLICATIONS
·For general–purpose switching
and power amplifier applications.
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2N4913
2N4914
2N4915
2N4913
2N4914
2N4915
40
60
VCBO
Collector-base voltage
Open emitter
V
80
40
VCEO
Collector-emitter voltage
Open base
V
60
80
VEBO
IC
Emitter-base voltage
Collector current
Open collector
5
V
A
A
W
ꢀ
5
IB
Base current
1
PD
Tj
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
87.5
150
-65~200
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
2.0
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N4913 2N4914 2N4915
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
40
TYP.
MAX
UNIT
2N4913
2N4914
2N4915
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.2A ;IB=0
60
V
80
VCEsat-1
VCEsat-2
VBE
Collector-emitter saturation voltage IC=2.5A; IB=0.25A
Collector-emitter saturation voltage IC=5A ;IB=1A
1.0
1.5
1.4
1.0
1.0
V
V
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=2.5A ; VCE=2V
V
ICEO
VCE=Rated VCEO; IB=0
VCB=Rated VCBO; IE=0
mA
mA
mA
mA
ICBO
VCE= Rated VCEO; VBE(off)=1.5V
TC=150ꢀ
1.0
2.0
ICEV
IEBO
VEB=5V; IC=0
1.0
hFE-1
hFE-2
fT
IC=2.5A ; VCE=2V
IC=5A ; VCE=2V
25
7
100
DC current gain
Transition frequency
IC=1A ; VCE=10V;f=1.0MHz
4
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N4913 2N4914 2N4915
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
相关型号:
![](http://pdffile.icpdf.com/pdf1/p00056/img/page/2N4913_292361_files/2N4913_292361_1.jpg)
2N4913LEADFREE
Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL
![](http://pdffile.icpdf.com/pdf1/p00056/img/page/2N4914_292363_files/2N4914_292363_1.jpg)
2N4914LEADFREE
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL
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