2N4913_09 [SEME-LAB]
SILICON EPITAXIAL NPN TRANSISTOR; 硅外延NPN晶体管
| 型号： | 2N4913_09 |
| 厂家： | 
SEME LAB |
| 描述： | SILICON EPITAXIAL NPN TRANSISTOR |
| 文件： | 总3页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON EPITAXIAL
NPN TRANSISTOR
2N4913
•
•
•
Low Collector Saturation Voltage.
Hermetic TO3 Metal Package.
Designed For General Purpose, Switching
and Power Amplifier Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
C
V
V
V
I
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
40V
CBO
CEO
EBO
40V
5V
5A
C
I
1.0A
B
P
T = 25°C
C
Total Power Dissipation at
87.5W
D
Derate Above 25°C
0.5W/°C
-65 to +200°C
-65 to +200°C
T
T
Junction Temperature Range
Storage Temperature Range
J
stg
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ. Max. Units
R
Thermal Resistance, Junction To Case
2
°C/W
θJC
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8300
Issue 1
Page 1 of 3
Website: http://www.semelab-tt.com
SILICON EPITAXIAL
NPN TRANSISTOR
2N4913
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
C
Symbols
Parameters
Test Conditions
Min. Typ
Max. Units
(1)
Collector-Emitter
Breakdown Voltage
V
I
= 10mA
= 40V
40
V
(BR)CEO
C
V
V
T
= -1.5V
1.0
2
CE
BE
= 150°C
I
Collector Cut-Off Current
CEV
C
I
V
V
V
I
= 40V
= 40V
= 5V
I = 0
B
mA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
1.0
1.0
1.0
100
CEO
CE
CB
EB
I
I = 0
E
CBO
I
I = 0
C
EBO
= 2.5A
= 5A
V
V
V
= 2V
25
7
C
CE
CE
CE
(1)
Forward-current transfer
ratio
h
FE
I
I
I
I
= 2V
= 2V
C
C
C
C
(1)
V
= 2.5A
= 2.5A
= 5A
Base-Emitter Voltage
1.4
1.0
1.5
BE(on)
I = 0.25A
B
V
(1)
Collector-Emitter Saturation
Voltage
V
CE(sat)
I = 1.0A
B
DYNAMIC CHARACTERISTICS
I
= 500mA
V
V
= 10V
= 10V
C
CE
CE
h
Small-Signal Current Gain
20
4
fe
f = 1.0KHz
= 1.0A
I
C
f
Transition Frequency
MHz
T
f = 1.0MHz
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Document Number 8300
Issue 1
Page 2 of 3
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
SILICON EPITAXIAL
NPN TRANSISTOR
2N4913
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO3 (TO-204AA) METAL PACKAGE
Underside View
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8300
Issue 1
Page 3 of 3
Website: http://www.semelab-tt.com
相关型号：
2N4914LEADFREE
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
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