2N4913 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N4913 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2N4913
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 5A
·DC Current Gain-
: hFE= 25-100 @IC= 2.5A
·Complement to Type 2N4904
APPLICATIONS
·Designed for general purpose use in power amplifier and
switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
VALUE
UNIT
V
Collector-Base Voltage
40
Collector-Emitter Voltage
Emitter-Base Voltage
40
V
5
5
V
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@TC=25℃
Junction Temperature
A
IB
1
A
PC
87.5
200
-65~200
W
℃
℃
TJ
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
2.0
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2N4913
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
VCEO(SUS)
Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0
40
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
IC= 2.5A; IB= 0.25A
IC= 5A; IB= 1A
1.0
1.5
1.4
1.0
0.1
V
VCE
VCE
(sat)-1
(sat)-2
V
IC= 2.5A; VCE= 2V
VCE= 40V; IB= 0
VCB= 40V; IE= 0
V
VBE(
)
on
ICEO
mA
mA
mA
mA
ICBO
ICEV
IEBO
hFE-1
hFE-2
fT
VCE= 40V; VBE( )= -1.5V
0.1
2.0
off
VCE= 40V; VBE( )= -1.5V, TC=150℃
off
VEB=-5V; IC= 0
1.0
DC Current Gain
IC= 2.5A; VCE= 2V
25
7
100
DC Current Gain
IC= 5A; VCE= 2V
Current-Gain—Bandwidth Product
4
MHz
IC= 1A; VCE= 10V; ftest= 1.0MHz
2
isc Website：www.iscsemi.cn
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