PZT882J-Y-C [SECOS]
NPN Silicon Medium Power Transistor;
| 型号： | PZT882J-Y-C |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Silicon Medium Power Transistor |
| 文件： | 总2页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PZT882J-C
3A, 40V
NPN Silicon Medium Power Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-223
ꢀ
Low Collector-Emitter Saturation Voltage
A
CLASSIFICATION OF hFE
M
4
Product-Rank PZT882J-O-C
PZT882J-Y-C
160~320
PZT882J-GR-C
200~400
Top View
C B
Range
100~200
1
2
3
K
F
L
E
MARKING
D882
D
G
H
J
PACKAGE INFORMATION
Millimeter
Millimeter
REF.
REF.
Min.
5.90
6.70
3.30
1.42
4.45
0.60
Max.
6.70
7.30
3.80
1.90
4.75
0.85
Min.
Max.
Package
MPQ
Leader Size
A
B
C
D
E
F
G
H
J
K
L
-
0.18
2.00 REF.
SOT-223
2.5K
13 inch
0.20
0.40
1.10 REF.
2.30 REF.
2.80 3.20
ORDER INFORMATION
M
Part Number
Type
PZT882J-O-C
PZT882J-Y-C
Lead (Pb)-free and Halogen-free
PZT882J-GR-C
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector-Base Voltage
40
Collector-Emitter Voltage
Emitter-Base Voltage
30
6
V
V
Collector Current-Continuous
Collector Dissipation
3
A
PC
1.25
-55~150
W
°C
Junction and Storage Temperature
TJ, TSTG
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min.
Typ.
Max.
Unit
V
Test Conditions
IC=100µA, IE=0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
40
-
-
-
-
30
V
IC=10mA, IB=0
IE=100µA, IC=0
VCB=40V, IE=0
VCE=30V, IB=0
VEB=6V, IC=0
6
-
-
V
-
-
1
µA
µA
µA
Collector Cut-Off Current
ICEO
-
-
10
1
Emitter Cut-Off Current
IEBO
-
100
32
-
-
-
400
-
VCE=2V, IC=1A
VCE=2V, IC=100mA
IC=2A, IB=200mA
IC=2A, IB=200mA
DC Current Gain
hFE
-
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
VCE(sat)
VBE(sat)
fT
-
0.5
1.5
-
V
V
-
-
-
50
MHz VCE=5V, IC=100mA, f=10MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Oct-2017 Rev. C
Page 1 of 2
PZT882J-C
3A, 40V
NPN Silicon Medium Power Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Oct-2017 Rev. C
Page 2 of 2
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