PZT951 [WEITRON]
PNP Silicon Planar High Current Transistor; PNP硅平面高电流晶体管
| 型号： | PZT951 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | PNP Silicon Planar High Current Transistor |
| 文件： | 总4页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PZT951
PNP Silicon Planar High Current Transistor
P b
COLLECTOR
2, 4
SOT-223
Lead(Pb)-Free
4
1. BASE
BASE
1
2.COLLECTOR
1
3.EMITTER
4.COLLECTOR
2
3
3
EM ITTER
ABSOLUTE MAXIMUM RATINGS
Rating
(T =25 C)
A
Symbol
Value
Unit
V
V
-100
Collector to Base Voltage
CBO
V
V
-60
CEO
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current
V
-6
V
EBO
I (DC)
C
-5
-15
A
I (Pulse)
C
A
Collector Current
3
Total Device Disspation T =25°C
P
W
˚C
˚C
A
D
+150
-55 to +150
Junction Temperature
Storage, Temperature
Tj
Tstg
*Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min).
Device Marking
PZT951=PZT951
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
I =-100µA, I =0
Symbol
BV
Min
Max
Max
Unit
-100
-
-
V
V
V
V
CBO
C
E
Collector-Emitter Breakdown Voltage
I =-1µA, R ≤1kΩ
BV
-100
-60
-6
-
-
-
-
-
-
CER
CEO
EBO
C
B
Collector-Emitter Breakdown Voltage(1)
I =-10mA, I =0
BV
BV
I
C
B
Emitter-Base Breakdown Voltage
I =-100µA, I =0
E
C
Collector Cut-Off Current
=-80V, I =0
-
-
-
-
-
-
-50
-50
-10
nA
nA
nA
CBO
V
CB
E
Collector Cut-Off Current
=-80V, R≤1kΩ
I
CER
V
CB
Emitter-Cut-Off Current
I
EBO
V =-6V, I =0
EB
C
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Rev.A 13-Jan-06
PZT951
ELECTRICAL CHARACTERISTICS (T =25˚C Unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
V =-1V, I =-10mA
h
100
100
75
200
200
90
-
CE
C
FE1
V =-1V, I =-2A
h
FE2
300
-
-
CE
C
-
V =-1V, I =-5A
h
FE3
CE
C
V =-1V, I =-10A
h
FE4
10
25
CE
C
Collector-Emitter Saturation Voltage
I =-100mA, I =-10mA
-
-
-
-
-20
-85
-155
-370
-50
C
B
-140
-210
-460
V
I =-1A, I =-100mA
CE(sat)
C
B
mV
I =-2A, I =-200mA
C
B
I =-5A, I =-500mA
C
B
Base-Emitter Saturation Voltage
I =-5A, I =-500mA
V
V
BE(sat)
V
V
-
-
-1.08
-1.24
-1.07
C
B
Base-Emitter On Voltage
V =-1V, I =-5A
BE(on)
-0.935
CE
C
DYNAMIC CHARACTERISTICS
Transition Frequency
f
MHz
pF
-
-
120
74
-
-
T
V =-10V, I =-100mA, f=50MHz
CE
C
Output Capacitance
V =-10V, I =0, f=1MHz
C
ob
CB
E
SWITCHING TIMES
Switching Times
t
-
-
82
-
-
on
I =-2A, I =-200mA
C
B1
ns
t
off
350
V =-10V, I =-200mA
CC
B2
Note 1.Pulse Test : Pulse width < 300µs, Duty cycle ≤ 20%.
WEITRON
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2/4
Rev.A 13-Jan-06
PZT951
1.8
1.8
1.6
1.4
1.2
1.0
0.8
T =25˚C
A
VCE=-1V
1.6
1.4
1.2
1.0
+100˚C
300
200
100
+25˚C
0.8
0.6
I /I =50
C
B
-
N
o
r
m
a
l
i
s
e
d
G
a
i
n
-
T
y
p
i
c
a
l
G
a
i
n
0.6
0.4
F E
F E
I /I =10
C
B
h
h
-55˚C
0.4
0.2
0.0
0.2
0.0
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
Collector Current(A)
Collector Current(A)
Fig.1 Current Gain & Collector Current
Fig.2 Saturation Voltage & Collector Current
1.8
1.8
IC / IB=10
IC / IB=10
1.6
1.6
1.4
1.4
1.2
-55˚C
1.2
( V )
+25˚C
1.0
1.0
+100˚C
-55˚C
-
( V o l t s )
0.8
0.6
0.8
C E ( s a t )
B E
+25˚C
V
V
0.6
0.4
0.2
0.0
+175˚C
0.4
0.2
0.0
+175˚C
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
Collector Current(A)
Collector Current(A)
Fig.3 Saturation Voltage & Collector Current
Fig.4 Saturation Voltage & Collector Current
100
T =25˚C
A
1.8
VCE=-1V
1.6
1.4
( A )
10
1
0.1ms
-55˚C
1.2
100ms
10ms
1s
+25˚C
-
( V o l t s )
1.0
0.8
0.6
D.C.
+100˚C
1.0ms
B E ( o n )
V
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
0.4
0.2
0.0
+175˚C
0.1
0.1
0.001
0.01
0.1
1
10 20
1
10
100
Collector Current(A)
Collector Emitter Current(A)
Fig.5 On Voltage & Collector Current
Fig.6 Safe Operating Area
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Rev.A 13-Jan-06
PZT951
SOT-223 Outline Dimensions
unit:mm
MILLIMETERS
A
F
DIM
A
B
C
D
F
G
H
J
K
L
MIN
6.30
3.30
1.50
0.60
2.90
2.20
MAX
6.70
3.70
1.75
0.89
3.20
2.40
4
S
B
1
2
3
D
0.020 0.100
L
G
0.24
1.50
0.85
0
0.35
2.00
1.05
10
J
C
M
M
S
H
K
6.70
7.30
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Rev.A 13-Jan-06
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