PZT955 [GOOD-ARK]
Small Signal Bipolar Transistor,;
| 型号： | PZT955 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | Small Signal Bipolar Transistor, |
| 文件： | 总4页 (文件大小：522K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PZT955
PNP Transistor
Features
■
Low saturation voltage
3
■
2
High continuous collector current
1
SOT-223
Applications
■
1. BASE
2. COLLECTOR
3. EMITTER
Switching appliaction
■ General-purpose amplifier
Absolute Maximum Ratings (TA=25°C unless otherwise noted）
Parameter
Collector-Base Voltage
Max.
Unit
V
Symbol
VCBO
VCEO
VEBO
IC
-180
Collector-Emitter Voltage
-140
V
Emitter-Base Voltage
-6
-4
V
Collector Current
A
Collector Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction Temperature Range
Storage Temperature Range
0.8
W
PC
156
°C/W
RθJA
TJ
°C
°C
-55 To +150
-55 To +150
TSTG
1/4
PZT955
PNP Transistor
Electrical Characteristics (TA=25°C unless otherwise noted）
Parameter
Symbol
Conditions
IC=-0.1mA, IE=0
Min.
Typ.
Max.
Unit
V
Collector-Base Breakdown Voltage
V(BR)CBO
-180
-
-
Collector-Emitter Breakdown Voltage V(BR)CEO
IC=-10mA, IB=0
-140
-
-
-
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V(BR)EBO
ICBO
IE=-0.1mA, IC=0
-6
-
V
VCB=-150V, IE=0
VEB=-6V, IC=0
-
-
-50
-10
-
nA
nA
-
IEBO
-
-
HFE(1)
HFE(2)
HFE(3)
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-3A
IC=-100mA, IB=-5mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-3A, IB=-300mA
IC=-3A, IB=-300mA
VCE=-5V, IC=-3A
100
-
DC Current Gain
100
-
300
-
-
75
-
-
-
-
-60
-120
-150
-370
-1.11
-0.95
-
mV
mV
mV
mV
V
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
-
-
Base-Emitter Saturation Voltage
Base-Emitter Voltage
VBE(sat)
VBE
fT
-
-
-
-
V
VCE=-10V,IC=-100mA,
f=50MHz
VCB=-20V, IE=0,
f=1MHz
Transition Frequency
-
70
40
68
1030
MHz
pF
nS
nS
Collector Output Capacitance
Cob
ton
-
-
-
-
VCC=-50V, IC=-1A,
IB1= IB2=-100mA
Switching Times
toff
-
-
Typical Electrical Characteristic Curves
hFE —— IC
Static Characteristic
400
350
300
250
200
150
100
50
-2.5
VCE=-5V
COMMON
EMITTER
Ta=25℃
-10mA
-9mA
--8mA
-7mA
-2.0
-1.5
-1.0
-0.5
-0.0
Ta=100 o
C
-6mA
-5mA
-4mA
-3mA
-2mA
Ta=25 o
C
IB=-1mA
-1
-10
-100
-1000
-4000
-0
-1
-2
-3
-4
-5
-6
-7
-8
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/4
PZT955
PNP Transistor
Typical Electrical Characteristic Curves
VBEsat —— IC
VCEsat —— IC
-1.2
-500
β=10
-1.1
-1.0
-0.9
-0.8
-100
-0.7
Ta=25℃
-0.6
-0.5
-0.4
-0.3
Ta=100℃
Ta=100℃
Ta=25℃
-10
-5
β=10
-0.1
-1
-10
-100
-1000
-3000
-0.1
-1
-10
-100
-1000
-3000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
VCB / VEB
Cob / Cib ——
VBE —— IC
-3000
800
-1000
-100
-10
Cib
300
200
Ta=100 o
C
100
Cob
Ta=25℃
-1
f=1MHz
IE=0 / IC=0
Ta=25 o
C
VCE=-5V
10
-0.1
-0.1
-0.0
-1
-10
-20
-0.2
-1.0
-1.2
-0.4
-0.6
-0.8
REVERSE VOLTAGE
V
(V)
BASE-EMITTER VOLTAGE
VBE(V)
Pc —— Ta
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
3/4
PZT955
PNP Transistor
Package Outline Dimensions (SOT-223)
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
——
Max.
1.800
0.100
1.700
0.840
3.100
0.350
6.700
7.300
3.700
Min.
——
Max.
0.071
0.004
0.067
0.033
0.122
0.014
0.264
0.287
0.146
A
A1
A2
b
b1
c
D
E
E1
e
0.020
1.500
0.660
2.900
0.230
6.300
6.700
3.300
0.001
0.059
0.026
0.114
0.009
0.248
0.264
0.130
2.300(BSC)
0.091(BSC)
L
θ
0.750
0°
——
10°
0.030
0°
——
10°
Recommended Pad Layout
unit(mm)
Marking and Ordering Information
Marking
Device
Package
Quantity
HSF Status
ZT955
2500pcs / Reel
RoHS
PZT955
SOT-223
Doc.USPZT955xSC2.0
Aug.2019
www.goodarksemi.com
4/4
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