PZT949 [SECOS]
Silicon Planar High Current Gain Transistor; 硅平面高电流增益晶体管
| 型号： | PZT949 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Silicon Planar High Current Gain Transistor |
| 文件： | 总2页 (文件大小：447K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PZT949
PNP Transistor
Silicon Planar High Current Gain Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-223
APPLICATION
A
M
PZT949 is designed for general purpose switching and amplifier applications.
4
Top View
C B
FEATURES
1
2
ꢀ
6Amps continuous current, up to 20Amps pulse current
Very low saturation voltage
3
K
L
E
ꢀ
Collector
2
4
MARKING
D
F
G
H
J
9 4 9
ꢀꢀꢀꢀ
ꢀ
= Date code
1
Millimeter
Millimeter
REF.
REF.
Base
Min.
Max.
6.70
7.30
3.70
1.90
Min.
Max.
0.10
2.00
0.35
1.05
A
B
C
D
E
F
6.30
6.70
3.30
1.42
G
H
J
K
L
0.02
1.50
0.25
0.85
3
Emitter
4.60 REF.
2.30 REF.
0.60
0.80
M
2.90
3.10
MAXIMUM RATINGS* (Tamb=25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VALUE
UNIT
Collector to Base Voltage
-50
V
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
VCEO
-30
V
VEBO
-6
V
IC
-5.5
A
Collector Current (Pulse)
Total Power Dissipation
Junction, Storage Temperature
ICM
-20
3
A
PD
W
TJ, TSTG
150, -55~150
°C
*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches
ELECTRICALCHARACTERISTICS (Tamb=25 °C unless otherwise specified)
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector - Base Breakdown Voltage
BVCBO
-50
-
-
V
IC = -100µA , IE = 0
Collector - Emitter Breakdown Voltage
(With Real Device Limit)
BVCER
-50
-
-
V
IC = -1µA , RB≦1KΩ
Collector - Emitter Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Base Cut - Off Current
BVCEO
BVEBO
ICBO
-30
-6
-
-
-
-
-
-
V
V
IC = -10mA, IB = 0
IE = -100µA ,IC = 0
VCB = -40V, IE = 0
-50
nA
Collector Base Cut - Off Current
(With Real Device Limit)
ICER
-
-
-50
nA
VCB = -40V ,R≦1KΩ
Emitter Base Cut - Off Current
IEBO
-
-
-10
nA
mV
mV
mV
mV
V
VEB = -6V, IC = 0
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
-
-
-75
IC = -0.5A, IB = -20 mA
IC = -1.0A, IB = -20 mA
IC = -2.0A, IB = -200 mA
IC = -5.5A, IB = -500 mA
IC = -5.5A, IB = -500 mA
VCE = -1V, IC = -5.5 A
VCE = -1V, IC = -10 mA
VCE = -1V, IC = -1 A
-
-
-140
Collector - Emitter Saturation Voltage
-
-
-270
-
-
-
-440
-
-1.25
Base - Emitter Voltage
DC Current Gain
-
-
-1.06
V
*hFE
100
-
-
1
*hFE
100
-
300
2
*hFE
75
-
-
-
-
-
-
-
-
VCE = -1V, IC = -5 A
3
*hFE
35
100
122
120
130
VCE = -2V, IC = -20 A
4
Transition Frequency
fT
-
MHz VCE = -10V, IC = -100mA, f = 50 MHz
Collector Output Capacitance
COB
tON
-
pF
nS
nS
VCB = -10 V, IE =0, f = 1 MHz
Turn-on
Turn-off
-
VCC = -10 V, IC = -4 A,
IB1 = -IB2 = -400 mA
Switching Time
tOFF
-
*Measured under pulse condition. Pulse width = 300µs, duty cycle ≦ 2%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Nov-2009 Rev. A
Page 1 of 2
PZT949
PNP Transistor
Silicon Planar High Current Gain Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Nov-2009 Rev. A
Page 2 of 2
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