BAS116W [SECOS]

0.215A , 85V Surface Mount Small Signal Switching Diode; 0.215A , 85V表面贴装小信号开关二极管
BAS116W
型号: BAS116W
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

0.215A , 85V Surface Mount Small Signal Switching Diode
0.215A , 85V表面贴装小信号开关二极管

小信号开关二极管 光电二极管
文件: 总2页 (文件大小:124K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS116W  
0.215A , 85V  
Surface Mount Small Signal Switching Diode  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOD-123  
FEATURES  
D
Low leakage current applications.  
Medium speed switching times.  
Surface mount package ideally suited for automatic Insertion.  
1
Cathode Band  
H
G
APPLICATINS  
2
F
High speed switching application.  
C
B
A
J
E
MARKING  
JV  
Millimeter  
Min. Max.  
0.95  
Millimeter  
REF.  
REF.  
Min.  
Max.  
1.80  
2.85  
3.85  
PACKAGE INFORMATION  
A
B
C
D
1.35  
F
G
H
J
1.40  
2.55  
3.55  
0.10 REF.  
1.05  
1.15  
Package  
MPQ  
3K  
Leader Size  
0.30  
0.78  
-
E
0.08  
0.25  
SOD-123  
7 inch  
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Peak Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
VRRM  
VRWM  
VR  
Ratings  
Unit  
V
85  
85  
V
85  
V
RMS Reverse Voltage  
VR(RMS)  
IFM  
60  
V
Forward Continuous Current  
Repetitive Peak Forward Current  
215  
mA  
mA  
IFRM  
500  
t=1µs  
t=1ms  
t=1s  
4
Non-Repetitive Peak Forward Surge  
Current  
IFSM  
1
0.5  
A
Power Dissipation  
PD  
500  
mW  
°C / W  
°C  
Thermal Resistance Junction to Ambient Air  
Junction, Storage Temperature  
RθJA  
500  
TJ, TSTG  
150, -65~150  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameters  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Reverse Breakdown Voltage  
V(BR)R  
85  
-
-
-
-
0.9  
1
V
IR=100µA  
IF=1mA  
-
-
IF=10mA  
Forward Voltage  
VF  
V
-
-
1.1  
1.25  
5
IF=50mA  
-
-
IF=150mA  
-
-
VR=75V  
Reverse Leakage Current  
IR  
nA  
-
-
80  
-
VR=75V, TJ=150°C  
VR=0, f=1.0MHz  
IF=IR=10mA, IRR=0.1xIR  
Junction Capacitance  
CJ  
-
2
-
pF  
nS  
Reverse Recovery Time  
TRR  
-
3
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
2-Dec-2011 Rev. A  
Page 1 of 2  
BAS116W  
0.215A , 85V  
Surface Mount Small Signal Switching Diode  
Elektronische Bauelemente  
RATINGS AND CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
2-Dec-2011 Rev. A  
Page 2 of 2  

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