BAS116_07 [INFINEON]
Silicon Low Leakage Diode; 硅低漏二极管
| 型号： | BAS116_07 |
| 厂家： | 
Infineon |
| 描述： | Silicon Low Leakage Diode |
| 文件： | 总6页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS116...
Silicon Low Leakage Diode
• Low-leakage applications
• Medium speed switching times
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
1)
BAS116
3
1
2
Type
Package
Configuration
Marking
BAS116
SOT23
single
JVs
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Value
80
Unit
V
Diode reverse voltage
Peak reverse voltage
Forward current
V
V
R
85
RM
250
mA
A
I
F
Non-repetitive peak surge forward current
t = 1 µs
I
FSM
4.5
0.5
370
t = 1 s
mW
°C
Total power dissipation
P
tot
T ≤ 54°C
S
150
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Symbol
Value
Unit
2)
K/W
Junction - soldering point
R
≤ 260
thJS
BAS116
1
Pb-containing package may be available upon special request
2
For calculation of RthJA please refer to Application Note Thermal Resistance
2007-04-19
1
BAS116...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
85
-
-
V
Breakdown voltage
V
(BR)
I
= 100 µA
(BR)
Reverse current
V = 75 V
I
nA
R
-
-
-
-
5
R
V = 75 V, T = 150 °C
80
R
A
mV
Forward voltage
I = 1 mA
V
F
-
-
-
-
-
-
-
-
900
1000
1100
1250
F
I = 10 mA
F
I = 50 mA
F
I = 150 mA
F
AC Characteristics
-
-
2
-
pF
µs
Diode capacitance
C
T
V = 0 V, f = 1 MHz
R
Reverse recovery time
t
0.6
1.5
rr
I = 10 mA, I = 10 mA, measured at I = 1mA ,
F
R
R
R = 100 Ω
L
Test circuit for reverse recovery time
D.U.T.
Puls generator: t = 10µs, D = 0.05,
p
t = 0.6ns, R = 50Ω
r
i
Oscillograph
Ι F
Oscillograph: R = 50Ω , t = 0.35ns, C ≤ 1pF
r
EHN00022
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2
BAS116...
Reverse current I = ƒ (T )
Forward Voltage V = ƒ (T )
F A
R
A
V = Parameter
I = Parameter
R
F
BAS 116
EHB00053
BAS 116
EHB00056
10 2
1.5
nA
V
max
Ι R
VF
101
=
Ι F 150 mA
1.0
0.5
0
10 2
10-1
10-2
50 mA
10 mA
1 mA
typ
0.1 mA
10-3
0
50
100
150
0
50
100
150
˚C
˚C
TA
TA
Forward current I = ƒ (V )
Forward current I = ƒ (T )
F S
F
F
T = 25°C
A
BAS116
BAS 116
EHB00054
300
mA
150
mA
Ι F
250
225
200
175
150
125
100
75
100
50
0
typ
max
50
25
0
0
°C
15 30 45 60 75 90 105 120
150
0
0.5
1.0
V
1.5
T
S
VF
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BAS116...
Permissible Puls Load R
= ƒ (t )
Permissible Pulse Load
thJS
p
I
/ I
= ƒ (t )
Fmax FDC p
10 3
10 2
-
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
10 1
0.2
0.5
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10 0
10 -1
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
T
T
P
P
2007-04-19
4
Package SOT23
BAS116...
Package Outline
±0.1
1
0.1 MAX.
±0.1
2.9
B
3
1
2
1)
+0.1
-0.05
0.4
A
0.08...0.15
C
0.95
0...8˚
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2007-04-19
5
BAS116...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-19
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