BAS116W_08 [PANJIT]

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES; 表面贴装,低漏电开关二极管
BAS116W_08
型号: BAS116W_08
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
表面贴装,低漏电开关二极管

二极管 开关
文件: 总3页 (文件大小:136K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
BAS116W/BAW156W/BAV170W/BAV199W  
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES  
Unit: inch (mm)  
SOT-323  
200mWatts  
POWER  
100 Volts  
VOLTAGE  
FEATURES  
• Suface mount package ideally suited for automatic insertion.  
• Very low leakage current. 2pA typical at VR=75V.  
• Low capacitance. 4pF max at VR=0V, f=1MHz  
.087(2.2)  
.070(1.8)  
In compliance with EU RoHS 2002/95/EC directives  
.054(1.35)  
.045(1.15)  
.006(.15)  
.002(.05)  
.056(1.40)  
.047(1.20)  
.004(.10)MAX.  
MECHANICALDATA  
• Case: SOT-323 plastic  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx weight: 0.0052 gram  
.016(.40)  
.008(.20)  
• Marking: BAS116W :PA,BAW156W :P4,BAV170W :P3,BAV199W :PB  
ABSOLUTE RATINGS (each diode)  
PARAM ETER  
Sym bol  
Value  
Units  
V
Reverse Voltage  
V
R
75  
100  
0.2  
4.0  
Peak Reverse Voltage  
V
RM  
V
A
A
Continuous Forward Current  
IF  
Non-repetitive Peak Forward Surge Currentatt=1.0us  
IFSM  
THERMALCHARACTERISTICS  
PARAM ETER  
Sym bol  
Value  
200  
Units  
m W  
PowerDissipation (Note 1)  
PTOT  
Therm alResistance,Junction to Am bient(Note 1)  
Junction Tem perature  
RθJA  
625  
O C/W  
O C  
T
J
-55 to 150  
-55 to 150  
Storage Tem perature  
T
STG  
O C  
SERIES  
COMMON CATHODE  
SINGLE  
COMMON ANODE  
3
NOTE:  
3
3
3
1. FR-4 Board = 70 x 60 x 1mm.  
1
2
1
2
2
1
2
1
BAV199W  
BAV170W  
BAS116W  
BAW156W  
REV.0.0-DEC.19.2008  
PAGE . 1  
ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted)  
PARAM ETER  
Sym bol  
TestCondition  
IR=100 uA  
M IN.  
75  
TYP.  
M AX.  
Units  
V
Reverse Breakdown Voltage  
V
(BR)  
V
V
R
R
=75 V  
=75 V,T  
0.002  
8.0  
5
80  
Reverse Current  
Forward Voltage  
I
R
F
T
nA  
V
J
=150 OC  
IF  
IF  
IF  
IF  
=1m A  
0.9  
1.0  
1.1  
=10m A  
=50m A  
=150m A  
V
C
1.25  
TotalCapacitance  
V
R
=0 V,f=1M H  
Z
2.0  
3.0  
pF  
us  
Reverse Recovery Tim e  
T
RR  
IF  
=I  
R
=10m A,R  
L
=100  
CHARACTERISTIC CURVES (each diode)  
1000  
100  
10  
10  
1.0  
TA C  
=-25O  
0.1  
VR=75V  
TA C  
=75O  
1.0  
0.1  
0.01  
TA C  
=25O  
T
A
=125O  
C
0.001  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
50  
100  
150  
200  
V
F, Forward Voltage (V)  
Tj, Junction Temperature (Deg C)  
Fig. 1-Reverse Leakage vs. Junction Temperature  
Fig. 2-Forward Current vs. Forward Voltage  
1.4  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
0
20  
40  
60  
80  
100  
VR, Reverse Voltage (V)  
Fig. 3- Total capacitance vs. Reverse Voltage  
REV.0.0-DEC.19.2008  
PAGE . 2  
MOUNTING PAD LAYOUT  
ORDER INFORMATION  
• Packing information  
T/R - 12K per 13" plastic Reel  
T/R - 3K per 7” plastic Reel  
LEGAL STATEMENT  
Copyright PanJit International, Inc 2009  
The information presented in this document is believed to be accurate and reliable. The specifications and information herein  
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit  
does not convey any license under its patent rights or rights of others.  
REV.0.0-DEC.19.2008  
PAGE . 3  

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