BAS116WS_09 [PANJIT]

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE; 表面贴装,低漏电开关二极管
BAS116WS_09
型号: BAS116WS_09
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE
表面贴装,低漏电开关二极管

二极管 开关
文件: 总3页 (文件大小:61K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
BAS116WS  
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE  
Unit: inch (mm)  
SOD-323  
200mWatts  
POWER  
100 Volts  
VOLTAGE  
FEATURES  
• Suface mount package ideally suited for automatic insertion.  
• Very low leakage current. 2nA typical at VR=75V.  
• Low capacitance. 2pF max at VR=0V, f=1MHz  
.078(1.95)  
.068(1.75)  
• In compliance with EU RoHS 2002/95/EC directives  
.038(.95)  
.027(.70)  
MECHANICALDATA  
.107(2.7)  
.090(2.3)  
• Case: SOD-323 plastic  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx weight: 0.008 gram  
• Marking: PA  
.012(.30)MIN.  
ABSOLUTE RATINGS (each diode)  
PA RA ME TE R  
S ymbol  
Value  
Uni ts  
V
Reverse Voltage  
V
R
75  
100  
0.2  
4.0  
P eak Reverse Voltage  
V
I
RM  
F
V
A
A
C onti nuous Forward C urrent  
Non-repeti ti ve P eak Forward S urge C urrent at t=1.0us  
I FS M  
THERMALCHARACTERISTICS  
P A R A M E TE R  
S ym bol  
V alue  
200  
U nits  
m W  
P ow er D issipation (N ote 1)  
P TO T  
Therm al R esistance, Junction to A m bient (N ote 1)  
Junction Tem perature  
R θJA  
625  
O C /W  
O C  
T
J
-55 to 150  
-55 to 150  
S torage Tem perature  
T
S TG  
O C  
NOTE:  
1. FR-5 Board = 1.0 x 0.75 x 0.062 in.  
REV.0.2-APR.8.2009  
PAGE . 1  
ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted)  
PA RA ME TE R  
S ymbol  
Test C ondi ti on  
IR=100 uA  
MIN.  
75  
TYP.  
MA X .  
Uni ts  
V
Reverse B reakdown Voltage  
V
(B R)  
V
V
R
R
=75 V  
=75 V ,T  
2.0  
8.0  
5
80  
Reverse C urrent  
Forward Voltage  
I
R
F
T
nA  
V
J
=150oC  
I
I
I
I
F
F
F
F
=1mA  
0.9  
1.0  
1.1  
=10mA  
=50mA  
=150mA  
V
1.25  
Total C apaci tance  
C
V
R
=0 V, f=1MH  
Z
2.0  
3.0  
pF  
us  
Reverse Recovery Ti me  
T
RR  
I
F
=I  
R
=10mA , R  
L
=100  
CHARACTERISTIC CURVES (each diode)  
1000  
100  
10  
10  
1.0  
TA C  
=-25O  
0.1  
VR=75V  
TA C  
=75O  
1.0  
0.1  
0.01  
TA C  
=25O  
T
A
=125O  
C
0.001  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
50  
100  
150  
200  
V
F, Forward Voltage (V)  
Tj, Junction Temperature (Deg C)  
Fig. 1-Reverse Leakage vs. Junction Temperature  
Fig. 2-Forward Current vs. Forward Voltage  
1.4  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
0
20  
40  
60  
80  
100  
VR, Reverse Voltage (V)  
Fig. 3- Total capacitance vs. Reverse Voltage  
REV.0.2-APR.8.2009  
PAGE . 2  
MOUNTING PAD LAYOUT  
ORDER INFORMATION  
• Packing information  
T/R - 12K per 13" plastic Reel  
T/R - 5K per 7" plastic Reel  
LEGALSTATEMENT  
Copyright PanJit International, Inc 2009  
The information presented in this document is believed to be accurate and reliable. The specifications and information herein  
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit  
does not convey any license under its patent rights or rights of others.  
REV.0.2-APR.8.2009  
PAGE . 3  

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