2SD1271A-P [SECOS]

NPN Plastic-Encapsulated Transistor;
2SD1271A-P
型号: 2SD1271A-P
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

NPN Plastic-Encapsulated Transistor

文件: 总2页 (文件大小:595K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SD1271A  
7A , 150V  
NPN Plastic-Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
ITO-220J  
FEATURES  
Power switching applications  
Low Collector to Emitter Saturation Voltage VCE(sat)  
Satisfactory Linearity of Forward Current Transfer Ratio hFE  
Large Collector Current  
B
N
D
E
M
A
C
CLASSIFICATION OF hFE  
Product-Rank  
2SD1271A-R  
2SD1271A-Q  
90~180  
2SD1271A-P  
130~260  
J
H
Range  
60~120  
K
L
G
F
L
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
14.80  
9.50  
Max.  
15.60  
10.50  
Min.  
Max.  
4.00  
1.50  
0.90  
2.74  
2.90  
A
B
C
D
E
F
H
J
K
L
M
N
3.00  
0.90  
0.50  
2.34  
2.50  
13.00 REF.  
4.30  
2.50  
2.40  
0.30  
4.70  
3.20  
2.90  
0.75  
φ 3.5 REF.  
G
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Collector to Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
IC  
150  
100  
7
V
V
Collector to Emitter Voltage  
Emitter to Base Voltage  
V
Collector Current - Continuous  
Collector Power Dissipation  
7
A
PC  
2
W
Thermal Resistance From Junction To Ambient  
Junction, Storage Temperature  
RθJA  
TJ, TSTG  
62.5  
°C / W  
°C  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol Min.  
Typ. Max.  
Unit  
Test Condition  
IC=0.1mA, IE=0  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut – Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
150  
-
-
-
-
V
V
100  
IC=10mA, IB=0  
IE=0.1mA, IC=0  
VCB=100V, IE=0  
VEB=5V, IC=0  
7
-
-
-
V
-
10  
50  
-
µA  
µA  
Emitter Cut – Off Current  
IEBO  
-
-
45  
60  
-
-
VCE=2V, IC=0.1A  
VCE=2V, IC=3A  
IC=5A, IB=250mA  
IC=5A, IB=250mA  
DC Current Gain  
hFE  
-
260  
0.5  
1.5  
-
Collector-emitter saturation voltage  
Base to Emitter Saturation Voltage  
Transition Frequency  
VCE(sat)  
VBE(sat)  
fT  
-
V
V
-
-
-
30  
MHz VCE=10V, IC=500mA, f =10MHz  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
08-Nov-2012 Rev. A  
Page 1 of 2  
2SD1271A  
7A , 150V  
NPN Plastic-Encapsulated Transistor  
Elektronische Bauelemente  
RATINGS AND CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
08-Nov-2012 Rev. A  
Page 2 of 2  

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