2SD1271Q [PANASONIC]
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3;
| 型号： | 2SD1271Q |
| 厂家： | 
PANASONIC |
| 描述： | Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件： | 总4页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1271
Silicon NPN epitaxial planar type
For power switching
Unit: mm
Complementary to 2SB0946
10.0 0.2
5.5 0.2
4.2 0.2
2.7 0.2
■ Features
φ 3.1 0.1
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory linearity of forward current transfer ratio hFE
• Large collector current IC
1.3 0.2
• Full-pack package which can be installed to the heat sink with one screw
1.4 0.1
+0.2
–0.1
0.5
■ Absolute Maximum Ratings TC = 25°C
0.8 0.1
Parameter
Symbol
Rating
130
80
Unit
V
2.54 0.3
5.08 0.5
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
1: Base
V
2: Collector
3: Emitter
EIAJ: SC-67
1
2 3
7
V
Collector current
IC
ICP
PC
7
A
TO-220F-A1 Package
Peak collector current
15
A
40
W
Collector power
dissipation
Ta = 25°C
2.0
150
Junction temperature
Storage temperature
Tj
°C
°C
Tstg
−55 to +150
■ Electrical Characteristics TC = 25°C 3°C
Parameter
Symbol
VCEO
ICBO
Conditions
Min
Typ
Max
Unit
V
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
IC = 10 mA, IB = 0
80
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
10
50
µA
µA
IEBO
hFE1
VCE = 2 V, IC = 0.1 A
VCE = 2 V, IC = 3 A
45
60
*
hFE2
260
0.5
1.5
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
VCE(sat) IC = 5 A, IB = 0.25 A
VBE(sat) IC = 5 A, IB = 0.25 A
V
V
fT
ton
tstg
tf
VCE = 10 V, IC = 0.5 A, f = 10 MHz
30
0.5
1.5
0.1
MHz
µs
IC = 3 A, IB1 = 0.3 A, IB2 = − 0.3 A
VCC = 50 V
Storage time
µs
Fall time
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
Publication date: April 2003
SJD00185BED
1
2SD1271
PC Ta
IC VCE
VCE(sat) IC
50
10
8
(1) IC/IB=10
(2) IC/IB=20
TC=25˚C
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
(3)With a 50×50×2mm
Al heat sink
(4)Without heat sink
(PC=2W)
TC=25˚C
10
1
(1)
40
IB=55mA
50mA
45mA
40mA
30
20
6
(2)
(1)
35mA
30mA
4
20mA
15mA
10mA
0.1
0.01
(2)
10
2
(3)
(4)
5mA
0
0
0
40
80
120
160
0.01
0.1
1
0
2
4
6
8
10
12
Ambient temperature Ta (°C)
Collector current IC (A)
Collector-emitter voltage VCE (V)
VCE(sat) IC
VBE(sat) IC
VBE(sat) IC
100
10
100
10
IC/IB=20
IC/IB=20
(1) IC/IB=10
(2) IC/IB=20
TC=25˚C
10
1
(1)
(2)
TC=–25˚C
100˚C
1
1
TC=100˚C
25˚C
25˚C
0.1
0.01
0.1
0.01
0.1
0.01
–25˚C
0.01
0.1
1
10
0.1
1
10
0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
hFE IC
fT IC
Cob VCB
104
104
104
103
102
10
1
VCE=2V
VCE=10V
f=10MHz
TC=25˚C
IE=0
f=1MHz
TC=25˚C
103
102
10
1
103
102
10
1
TC=100˚C
25˚C
–25˚C
0.01
0.1
1
10
0.1
1
10
100
0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector-base voltage VCB (V)
SJD00185BED
2
2SD1271
ton, tstg, tf IC
Safe operation area
100
10
100
10
Non repetitive pulse
TC=25˚C
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
(IB1=–IB2
CC=50V
TC=25˚C
)
ICP
IC
V
t=0.5ms
t=10ms
1
1
tstg
ton
t=1ms
DC
tf
0.1
0.01
0.1
0.01
1
10
100
1000
0
2
4
6
8
Collector current IC (A)
Collector-emitter voltage VCE (V)
Rth t
103
102
(1)Without heat sink
(2)With a 100×100×2mm Al heat sink
(1)
(2)
10
1
10−1
10−2
10−4
10−3
10−2
10−1
1
10
102
103
104
Time t (s)
SJD00185BED
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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