2SD1271AP [ETC]
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7A I(C) | SOT-186 ; 晶体管| BJT | NPN | 100V V（ BR ） CEO | 7A I（C ） | SOT- 186\n
| 型号： | 2SD1271AP |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7A I(C) | SOT-186
|
| 文件： | 总4页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1271, 2SD1271A
Silicon NPN epitaxial planar type
For power switching
Unit: mm
Complementary to 2SB0946 (2SB946) and 2SB0946A (2SB946A)
10.0±0.2
5.5±0.2
4.2±0.2
Features
2.7±0.2
■
●
Low collector to emitter saturation voltage VCE(sat)
●
Satisfactory linearity of foward current transfer ratio hFE
φ3.1±0.1
●
Large collector current IC
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
1.4±0.1
Absolute Maximum Ratings (T =25˚C)
■
C
Parameter
Symbol
Ratings
Unit
0.5 +–00..12
0.8±0.1
Collector to
2SD1271
2SD1271A
2SD1271
130
VCBO
V
base voltage
Collector to
150
2.54±0.25
80
5.08±0.5
VCEO
V
1
2
3
emitter voltage 2SD1271A
Emitter to base voltage
Peak collector current
Collector current
100
1:Base
2:Collector
3:Emitter
VEBO
ICP
7
V
A
A
15
TO–220 Full Pack Package(a)
IC
7
Collector power TC=25°C
40
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
10
Unit
µA
Collector cutoff current
Emitter cutoff current
VCB = 100V, IE = 0
IEBO
VCEO
hFE1
VEB = 5V, IC = 0
50
µA
Collector to emitter 2SD1271
80
100
45
IC = 10mA, IB = 0
V
voltage
2SD1271A
VCE = 2V, IC = 0.1A
Forward current transfer ratio
*
hFE2
VCE = 2V, IC = 3A
90
260
0.5
1.5
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 5A, IB = 0.25A
V
V
IC = 5A, IB = 0.25A
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 10MHz
30
0.5
1.5
0.1
MHz
µs
IC = 3A, IB1 = 0.3A, IB2 = – 0.3A,
VCC = 50V
µs
µs
*hFE2 Rank classification
Rank
hFE2
Q
P
90 to 180
130 to 260
Note) The part numbers in the parenthesis show conventional part number.
1
Power Transistors
2SD1271, 2SD1271A
PC — Ta
IC — VCE
VCE(sat) — IC
50
10
8
(1) IC/IB=10
(2) IC/IB=20
TC=25˚C
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
10
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
(1)
40
30
20
10
0
3
1
IB=55mA
50mA
45mA
40mA
6
(2)
(1)
35mA
30mA
0.3
0.1
4
20mA
15mA
10mA
(2)
2
0.03
0.01
(3)
(4)
5mA
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.01
0.03
0.1
0.3
1
3
(
)
( )
V
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC
VCE(sat) — IC
VBE(sat) — IC
VBE(sat) — IC
100
100
(1) IC/IB=10
(2) IC/IB=20
TC=25˚C
IC/IB=20
IC/IB=20
10
30
10
30
10
3
1
(1)
(2)
3
1
3
1
TC=–25˚C
0.3
0.1
TC=100˚C
25˚C
100˚C
25˚C
0.3
0.1
0.3
0.1
–25˚C
0.03
0.01
0.03
0.01
0.03
0.01
0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
30
0.01 0.03
0.1
0.3
1
3
10
( )
A
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
hFE — IC
fT — IC
Cob — VCB
10000
10000
10000
VCE=2V
VCE=10V
f=10MHz
TC=25˚C
IE=0
f=1MHz
TC=25˚C
3000
3000
1000
3000
1000
1000
300
100
300
100
300
100
TC=100˚C
25˚C
–25˚C
30
10
30
10
30
10
3
1
3
1
3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
30
100
( )
A
( )
A
( )
Collector to base voltage VCB V
Collector current IC
Collector current IC
2
Power Transistors
2SD1271, 2SD1271A
ton, tstg, tf — IC
Area of safe operation (ASO)
100
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10 (IB1=–IB2
Non repetitive pulse
TC=25˚C
30
10
)
30
10
ICP
IC
V
CC=50V
TC=25˚C
t=0.5ms
3
1
3
1
10ms
tstg
ton
tf
1ms
0.3
0.1
0.3
0.1
DC
0.03
0.01
0.03
0.01
0
1
2
3
4
5
6
7
8
1
3
10
30
100 300 1000
( )
A
( )
V
Collector current IC
Collector to emitter voltage VCE
Rth(t) — t
103
102
10
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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2001 MAR
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