2SD1271A_15 [JMNIC]
Silicon NPN Transistors;型号: | 2SD1271A_15 |
厂家: | QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
描述: | Silicon NPN Transistors |
文件: | 总1页 (文件大小:38K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Power Transistors
www.jmnic.com
2SD1271A
Silicon NPN Transistors
B C E
ꢀFeatures
﹒For Power Switching.
﹒With TO-220Fa package
﹒Complement to type 2SB946
ꢀAbsolute Maximum Ratings Tc=25
SYMBOL
VCBO
VCEO
VEBO
ICP
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
RATING
UNIT
V
150
100
7
V
V
15
A
IC
7
A
PC
Collector power dissipation
Junction temperature
Storage temperature
40
W
Tj
150
-55~150
Tstg
TO-220Fa
ꢀElectrical Characteristics Tc=25
SYMBOL
PARAMETER
CONDITIONS
MIN
Typ.
MAX
UNIT
ICBO
Collector cut-off current
VCB=100V; IE=0
10
uA
IEBO
VCBO
Emitter cut-off current
VEB=5V; IC=0
50
uA
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Base-emitter saturation voltages
Base-emitter saturation voltages
Transition frepuency
VCEO
IC=10mA; IB=0
IC=5A; IB=0.25A
100
VEBO
VCE(sat-1)
VCE(sat-2)
hFE-1
0.5
V
IC=0.1A; VCE=2V
IC=3A; VCE=2V
IC=5A; IB=0.25A
45
60
hFE-2
260
1.5
VBE(sat)1
VBE(sat)2
fT
V
IC=0.5A; VCE=10V,f=10MHz
30
MHz
ꢀhFE-2 Classification
R
Q
P
60-120
90-180
130-260
JMnic
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