BUV48C [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
BUV48C
型号: BUV48C
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:136K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUV48C  
DESCRIPTION  
·With TO-3PN package.  
·High voltage.  
·Fast switching speed.  
APPLICATIONS  
·Linear and switching industrial equipment.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PN) and symbol  
3
Emitter  
Absolute maximum ratings (Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
1200  
700  
7
UNIT  
V
Open emitter  
Open base  
V
Open collector  
V
15  
A
ICM  
Collector current -peak  
Base current  
tp<5ms  
30  
A
IB  
4
A
IBM  
Base current-peak  
tp<5ms  
TC=25ꢀ  
20  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
125  
150  
-65~150  
W
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal resistance junction case  
1.0  
/W  
Rth j-case  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUV48C  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCEsat-1  
VCEsat-2  
VBEsat-1  
VBEsat-2  
ICES  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
Emitter-base sustaining voltage  
IC=100mA; IB=0  
700  
Collector-emitter saturation voltage IC=6A; IB=1.5A  
Collector-emitter saturation voltage IC=10A; IB=4A  
1.5  
3
V
V
Base-emitter saturation voltage  
Base-emitter saturation voltage  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
IC=6A; IB=1.5A  
IC=10A; IB=4A  
1.5  
2
V
V
VCE=1200V ;VBE=0  
T=125°C  
0.5  
3
mA  
mA  
mA  
ICEO  
VCE=700V; IC=0  
VEB=6V; IC=0  
1
1
IEBO  
hFE  
DC current gain  
IC=1A ; VCE=5V  
15  
50  
Switching times:  
ton  
Turn-on time  
0.5  
1.5  
0.2  
1.0  
3.0  
0.7  
µs  
µs  
µs  
IC=6A; IB1=- IB2=1.5A  
VCC=250V  
ts  
Storage time  
Fall time  
tf  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUV48C  
PACKAGE OUTLINE  
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)  
3

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