BUV50 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BUV50 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV50
DESCRIPTION
·With TO-3 package
·High dielectric strength
·Short switching time
APPLICATIONS
·Suitable for use in clocked
voltatge converters
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
250
125
7
UNIT
V
Open base
V
Open collector
V
25
A
ICM
Collector current-peak
Base current
50
A
IB
6
A
IBM
Base current-peak
12
A
PT
Total power dissipation
Junction temperature
Storage temperature
Tmb≤25ꢀ
150
150
-65~200
W
ꢀ
Tj
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
1.17
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV50
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat-1
VCEsat-2
VCEsat-3
VBEsat-1
VBEsat-2
ICBO
PARAMETER
CONDITIONS
MIN
125
7
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.2A ; L=25mH
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IE=50mA; IC=0
V
IC=10A; IB=0.5A
TC=100ꢀ
0.8
0.9
V
IC=20A; IB=2A
TC=100ꢀ
0.9
1.5
V
IC=24A; IB=3A
TC=100ꢀ
1.2
1.8
V
IC=20A; IB=2A
TC=100ꢀ
1.6
1.7
V
IC=24A; IB=3A
TC=100ꢀ
1.7
1.9
V
VCB=VCBO(BR); IE=0
TC=100ꢀ
1
5
mA
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
hFE
DC current gain
IC=5A ; VCE=4V
30
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV50
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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