BUV48CFI [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BUV48CFI |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV48CFI
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
·High Current Capability
·Fast Switching Speed
APPLICATIONS
·Designed for switching and industrial applications from
single and three-phase mains.
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCER
VCES
VCEO
VEBO
IC
PARAMETER
VALUE
1200
1200
700
7
UNIT
V
Collector-Emitter Voltage
(RBE= 10Ω)
Collector-Emitter Voltage
(VBE= 0)
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current-Continuous
Collector Current-Peak tp< 5ms
Base Current-Continuous
Base Current-peak tp< 5ms
15
A
ICM
30
A
IB
4
A
IBM
20
A
Collector Power Dissipation
@TC=25℃
PC
65
W
℃
℃
Tj
Junction Temperature
150
-65~150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
1.0
℃/W
Thermal Resistance,Junction to Case
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV48CFI
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCER(SUS)
PARAMETER
CONDITIONS
MIN
700
MAX
UNIT
V
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 100mA; IB= 0
IC= 0.5A; L= 2mH; Vclamp= 1200V
1200
V
RBE= 10Ω
IC= 6A; IB= 1.5A
IC= 10A; IB= 4A
IC= 6A; IB= 1.5A
IC= 10A; IB= 4A
1.5
3.0
1.5
2.0
V
VCE
VCE
VBE
VBE
(sat)-1
(sat)-2
(sat)-1
(sat)-2
V
V
V
VCE= 1200V; RBE= 10Ω
VCE= 1200V; RBE= 10Ω; TC=125℃
0.5
4.0
ICER
mA
mA
mA
mA
VCE= 1200V; VBE= 0
VCE= 1200V; VBE= 0; TC=125℃
0.5
3.0
ICES
ICEO
IEBO
Collector Cutoff Current
Collector Cutoff Current
VCE= 700V; IB= 0
VEB= 6V; IC= 0
1.0
1.0
Emitter Cutoff Current
Switching times Resistive Load
Turn-on Time
Storage Time
Fall Time
1.0
3.0
0.7
μs
μs
μs
ton
IC= 6A; IB1=-IB2= 1.5A; VCC= 250V
ts
tf
isc Website：www.iscsemi.cn
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