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BUV50 [ISC]

isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
BUV50
型号： BUV50
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

isc Silicon NPN Power Transistor
ISC的硅NPN功率晶体管

晶体 晶体管
文件： 总2页 (文件大小：105K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BUV50  
DESCRIPTION  
·High Current Capability  
·Low Collector Saturation Voltage-  
: VCE(sat)= 0.8V (Max.) @IC= 10A  
·High Switching Speed  
APPLICATIONS  
·Designed for high current, high speed, high power  
applications.  
Absolute maximum ratings(Ta=25℃)  
SYMBOL  
VCEV  
VCEO  
VEBO  
IC  
PARAMETER  
VALUE  
250  
125  
7
UNIT  
V
Collector-Emitter Voltage  
(VBE= -1.5V)  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
Base Current-peak  
25  
A
ICM  
50  
A
IB  
6
A
IBM  
12  
A
Collector Power Dissipation  
@TC=25℃  
PC  
150  
175  
-65~175  
W
℃
℃
Tj  
Junction Temperature  
Tstg  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX UNIT  
1.0  
℃/W  
Thermal Resistance,Junction to Case  
Rth j-c  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BUV50  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
V(BR)EBO  
PARAMETER  
CONDITIONS  
IC= 0.2A ; IB= 0; L= 25mH  
IE= 50mA; IC= 0  
MIN  
125  
7
MAX  
UNIT  
V
Collector-Emitter Sustaining Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
V
IC= 10A; IB= 0.5A  
IC= 10A; IB= 0.5A;TC= 100℃  
0.8  
0.9  
V
VCE  
(sat)-1  
(sat)-2  
IC= 20A ;IB= 2A  
IC= 20A; IB= 2A;TC= 100℃  
0.9  
1.5  
V
VCE  
IC= 20A ;IB= 2A  
IC= 20A; IB= 2A;TC= 100℃  
1.6  
1.7  
V
VBE  
(sat)  
VCE= VCEV; RBE= 10Ω  
VCE= VCEV; RBE= 10Ω; TC=100℃  
1.0  
5.0  
ICER  
mA  
mA  
mA  
VCE= VCEV; VBE= -1.5V  
VCE= VCEV; VBE= -1.5V;TC=100℃  
1.0  
5.0  
ICEV  
IEBO  
hFE  
Collector Cutoff Current  
Emitter Cutoff Current  
VEB= 5V; IC= 0  
1.0  
DC Current Gain  
IC= 10A ; VCE= 4V  
20  
Switching times Resistive Load  
Rise Time  
Storage Time  
Fall Time  
0.6  
1.2  
0.3  
μs  
μs  
μs  
tr  
ts  
tf  
IC= 24A; IB1= 3A; VCC= 100V  
VBB= -5V, RB= 0.83Ω; tp= 30μs  
isc Website：www.iscsemi.cn  

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