2SD1277 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1277 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1277 2SD1277A
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SB951/951A
·High DC current gain
·High-speed switching
APPLICATIONS
·For medium speed power switching
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2SD1277
2SD1277A
2SD1277
2SD1277A
60
VCBO
Collector-base voltage
Open emitter
V
80
60
VCEO
Collector-emitter voltage
Open base
V
80
VEBO
IC
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Open collector
7
V
A
A
8
12
ICM
TC=25ꢀ
Ta=25ꢀ
45
PC
Collector power dissipation
W
2
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tj
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1277 2SD1277A
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX
UNIT
2SD1277
Collector-emitter
breakdown voltage
V(BR)CEO
IC=30mA , IB=0
V
2SD1277A
80
VCEsat
VBEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC=4A; IB=8mA
IC=4A ;IB=8mA
VCB=60V ;IE=0
1.5
2
V
V
2SD1277
Collector
ICBO
0.1
2
mA
mA
cut-off current
2SD1277A
VCB=80V; IE=0
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
VEB=7V; IC=0
IC=8A ; VCE=3V
IC=4A ; VCE=3V
IC=0.5A; VCE=10V;f=1MHz
500
2000
20
DC current gain
10000
Transition frequency
MHz
Switching times
Turn-on time
0.5
4.0
1.0
µs
µs
µs
ton
tstg
tf
IC=4A ;IB1=8mA
IB2=-8mA;VCC=50V
Storage time
Fall time
ꢀ hFE-2 Classifications
Q
R
2000-5000
4000-10000
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1277 2SD1277A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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