2SD1277_15 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SD1277_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1277 2SD1277A
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SB951 and 2SB951A
·High forward current transfer ratio hFE
·High-speed switching
APPLICATIONS
·For medium speed power switching
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2SD1277
2SD1277A
2SD1277
2SD1277A
60
VCBO
Collector-base voltage
Open emitter
V
80
60
VCEO
Collector-emitter voltage
Open base
V
80
VEBO
IC
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Open collector
7
V
A
A
8
12
ICM
TC=25℃
Ta=25℃
45
PC
Collector power dissipation
W
2
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tj
Tstg
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1277 2SD1277A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2SD1277
60
V
Collector-emitter
breakdown voltage
VCEO
IC=30mA , IB=0
2SD1277A
80
V
V
VCEsat
VBEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC=4A IB=8mA
IC=4A IB=8mA
VCB=60V IE=0
1.5
2
V
2SD1277
Collector cut-off current
2SD1277A
0.1
0.1
2
Ma
mA
mA
ICBO
V
CB=80V IE=0
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
VEB=7V; IC=0
IC=8A ; VCE=3V
IC=4A ; VCE=3V
500
2000
20
DC current gain
10000
IC=0.5A;
VCE=10V;f=1MHz
Transition frequency
MHz
Switching times
Turn-on time
0.5
4
Μs
Μs
μs
ton
tstg
tf
IC=4A ;IB1=8mA
IB2=-8mA;VCC=50V
Storage time
Fall time
1
ꢀ hFE-2 Classifications
Q
R
2000-5000
4000-10000
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1277 2SD1277A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic
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