2SD1279 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1279 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1279
DESCRIPTION
·With TO-3 package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·Color TV horizontal deflection output
applications
·Switching regulator applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
1400
600
5
UNIT
V
Open base
V
Open collector
V
10
A
IB
Base current
5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
150
-65~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1279
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=100mA ;IB=0
600
IC=8A; IB=2A
5.0
1.6
10
V
IC=8A; IB=2A
V
VCB=500V; IE=0
VEB=5V; IC=0
μA
mA
IEBO
1.0
hFE
DC current gain
IC=2A ; VCE=5V
IC=0.1A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
8
22
3
fT
Transition frequency
MHz
pF
COB
Collector output capacitance
Fall time
165
tf
1.0
μs
ICP=7A ;IB1( )=1.5A
end
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1279
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
相关型号：
2SD1280
Silicon NPN epitaxial planer type(For low-voltage type medium output power amplification)
PANASONIC
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