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2SD1277_2015 [JMNIC]

Silicon NPN Power Transistors;
2SD1277_2015
型号： 2SD1277_2015
厂家： QUANZHOU JINMEI ELECTRONIC CO.,LTD.    QUANZHOU JINMEI ELECTRONIC CO.,LTD.
描述：

Silicon NPN Power Transistors
文件： 总3页 (文件大小：130K)
中文：  中文翻译
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Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2SD1277 2SD1277A  
DESCRIPTION  
·With TO-220Fa package  
·Complement to type 2SB951 and 2SB951A  
·High forward current transfer ratio hFE  
·High-speed switching  
APPLICATIONS  
·For medium speed power switching  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
Fig.1 simplified outline (TO-220Fa) and symbol  
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2SD1277  
2SD1277A  
2SD1277  
2SD1277A  
60  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
60  
VCEO  
Collector-emitter voltage  
Open base  
V
80  
VEBO  
IC  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Open collector  
7
V
A
A
8
12  
ICM  
TC=25℃  
Ta=25℃  
45  
PC  
Collector power dissipation  
W
2
Junction temperature  
Storage temperature  
150  
-55~150  
℃
℃
Tj  
Tstg  
JMnic  
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2SD1277 2SD1277A  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
2SD1277  
60  
V
Collector-emitter  
breakdown voltage  
VCEO  
IC=30mA , IB=0  
2SD1277A  
80  
V
V
VCEsat  
VBEsat  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
IC=4A IB=8mA  
IC=4A IB=8mA  
VCB=60V IE=0  
1.5  
2
V
2SD1277  
Collector cut-off current  
2SD1277A  
0.1  
0.1  
2
Ma  
mA  
mA  
ICBO  
V
CB=80V IE=0  
IEBO  
hFE-1  
hFE-2  
fT  
Emitter cut-off current  
DC current gain  
VEB=7V; IC=0  
IC=8A ; VCE=3V  
IC=4A ; VCE=3V  
500  
2000  
20  
DC current gain  
10000  
IC=0.5A;  
VCE=10V;f=1MHz  
Transition frequency  
MHz  
Switching times  
Turn-on time  
0.5  
4
Μs  
Μs  
μs  
ton  
tstg  
tf  
IC=4A ;IB1=8mA  
IB2=-8mA;VCC=50V  
Storage time  
Fall time  
1
ꢀ hFE-2 Classifications  
Q
R
2000-5000  
4000-10000  
JMnic  
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2SD1277 2SD1277A  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)  
JMnic  

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