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2SD1277A [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SD1277A
型号： 2SD1277A
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 开关 局域网
文件： 总3页 (文件大小：48K)
中文：  中文翻译
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Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1277 2SD1277A  
DESCRIPTION  
·With TO-220Fa package  
·Complement to type 2SB951/951A  
·High DC current gain  
·High-speed switching  
APPLICATIONS  
·For medium speed power switching  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220Fa) and symbol  
3
Absolute maximum ratings (Ta=25℃)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2SD1277  
2SD1277A  
2SD1277  
2SD1277A  
60  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
60  
VCEO  
Collector-emitter voltage  
Open base  
V
80  
VEBO  
IC  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Open collector  
7
V
A
A
8
12  
ICM  
TC=25℃  
Ta=25℃  
45  
PC  
Collector power dissipation  
W
2
Junction temperature  
Storage temperature  
150  
-55~150  
℃
℃
Tj  
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1277 2SD1277A  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
60  
TYP.  
MAX  
UNIT  
2SD1277  
Collector-emitter  
breakdown voltage  
V(BR)CEO  
IC=30mA , IB=0  
V
2SD1277A  
80  
VCEsat  
VBEsat  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
IC=4A; IB=8mA  
IC=4A ;IB=8mA  
VCB=60V ;IE=0  
1.5  
2
V
V
2SD1277  
Collector  
ICBO  
0.1  
2
mA  
mA  
cut-off current  
2SD1277A  
V
CB=80V; IE=0  
IEBO  
hFE-1  
hFE-2  
fT  
Emitter cut-off current  
DC current gain  
VEB=7V; IC=0  
IC=8A ; VCE=3V  
500  
2000  
20  
DC current gain  
IC=4A ; VCE=3V  
10000  
Transition frequency  
IC=0.5A; VCE=10V;f=1MHz  
MHz  
Switching times  
Turn-on time  
0.5  
4.0  
1.0  
μs  
μs  
μs  
ton  
tstg  
tf  
IC=4A ;IB1=8mA  
IB2=-8mA;VCC=50V  
Storage time  
Fall time  
‹ hFE-2 Classifications  
Q
R
2000-5000  
4000-10000  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1277 2SD1277A  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)  
3

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