2SD1277A [PANASONIC]
Silicon PNP epitaxial planar type Darlington(For midium-speed switching); PNP硅外延平面型达林顿（对煤层炮高速开关）
| 型号： | 2SD1277A |
| 厂家： | 
PANASONIC |
| 描述： | Silicon PNP epitaxial planar type Darlington(For midium-speed switching) |
| 文件： | 总3页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SB951, 2SB951A
Silicon PNP epitaxial planar type Darlington
For midium-speed switching
Unit: mm
4.2±0.2
10.0±0.2
5.5±0.2
Complementary to 2SD1277 and 2SD1277A
2.7±0.2
Features
High foward current transfer ratio hFE
■
φ3.1±0.1
●
●
High-speed switching
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
1.4±0.1
Absolute Maximum Ratings (T =25˚C)
■
C
+0.2
–0.1
0.5
0.8±0.1
Parameter
Collector to
Symbol
Ratings
Unit
2SB951
2SB951A
2SB951
–60
2.54±0.25
VCBO
V
base voltage
Collector to
–80
5.08±0.5
–60
1
2
3
1:Base
2:Collector
3:Emitter
VCEO
V
emitter voltage 2SB951A
Emitter to base voltage
Peak collector current
Collector current
–80
VEBO
ICP
–7
V
A
A
TO–220 Full Pack Package(a)
–12
Internal Connection
IC
–8
C
E
Collector power TC=25°C
45
PC
W
dissipation
Ta=25°C
2
B
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
Symbol
ICBO
Conditions
min
typ
max
–100
–100
–2
Unit
µA
mA
V
2SB951
VCB = –60V, IE = 0
current
2SB951A
VCB = –80V, IE = 0
VEB = –7V, IC = 0
Emitter cutoff current
IEBO
Collector to emitter 2SB951
voltage 2SB951A
–60
–80
VCEO
IC = –30mA, IB = 0
*
hFE1
VCE = –3V, IC = –4A
2000
500
10000
Forward current transfer ratio
hFE2
VCE = –3V, IC = –8A
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = –4A, IB = –8mA
–1.5
–2
V
V
IC = –4A, IB = –8mA
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = –10V, IC = –1A, f = 1MHz
20
0.5
2
MHz
µs
IC = –4A, IB1 = –8mA, IB2 = 8mA,
VCC = –50V
µs
1
µs
*hFE1 Rank classification
Rank
hFE1
Q
P
2000 to 5000 4000 to 10000
1
Power Transistors
2SB951, 2SB951A
PC — Ta
IC — VCE
VCE(sat) — IC
50
–8
–7
–6
–5
–4
–3
–2
–1
0
–100
(1) TC=Ta
(2) With a 100 × 100 × 2mm
IC/IB=500
TC=25˚C
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
–30
–10
40
30
20
10
0
IB=–2.0mA
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
25˚C
–3
–1
(1)
TC=100˚C
–25˚C
– 0.4mA
– 0.2mA
(2)
– 0.3
– 0.1
(3)
(4)
0
20 40 60 80 100 120 140 160
0
–1
–2
–3
–4
–5
– 0.1
– 0.3
–1
–3
–10
(
)
(
V
)
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
VBE(sat) — IC
VBE(sat) — IC
–100
–100
–100
IC/IB=500
(1) IC/IB=250
(2) IC/IB=500
(3) IC/IB=1000
TC=25˚C
(1) IC/IB=250
(2) IC/IB=500
(3) IC/IB=1000
TC=25˚C
–30
–10
–30
–10
–30
–10
(3)
(1)
(2)
(3)
TC=–25˚C
25˚C
100˚C
–3
–1
–3
–1
–3
–1
(2)
(1)
– 0.3
– 0.1
– 0.3
– 0.1
– 0.3
– 0.1
– 0.1
– 0.3
–1
–3
–10
– 0.1
– 0.3
–1
–3
–10
– 0.1
– 0.3
–1
–3
–10
(
A
)
(
A
)
( )
Collector current IC A
Collector current IC
Collector current IC
hFE — IC
Cob — VCB
Area of safe operation (ASO)
105
10000
–100
VCE=–3V
IE=0
f=1MHz
Non repetitive pulse
TC=25˚C
3000
1000
–30
–10
TC=25˚C
ICP
IC
25˚C
TC=100˚C
104
103
102
t=1ms
10ms
300
100
–3
–1
DC
–25˚C
30
10
– 0.3
– 0.1
3
1
– 0.03
– 0.01
– 0.1
– 0.3
–1
–3
–10
– 0.1 – 0.3
–1
–3
–10 –30 –100
–1
–3
–10 –30 –100 –300 –1000
(
A
)
(
V
)
( )
Collector to emitter voltage VCE V
Collector current IC
Collector to base voltage VCB
2
Power Transistors
2SB951, 2SB951A
Rth(t) — t
103
102
10
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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