2N6251 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6251 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6249 2N6250 2N6251
DESCRIPTION
·With TO-3 package
·High voltage,high speed
·Low collector saturation voltage
APPLICATIONS
·High voltage inverters
·Switching regulators
·Line operated amplifier
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3) and symbol
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
300
375
450
200
275
350
6
UNIT
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
V
A
A
A
W
ꢀ
10
Collector current-peak
Base current
30
10
PT
Tj
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
175
200
-65~200
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
1.0
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6249 2N6250 2N6251
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP. MAX UNIT
2N6249
2N6250
2N6251
200
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=200mA ; IB=0
V
V
275
350
2N6249 IC=10A;IB=1.0A
2N6250 IC=10A;IB=1.25 A
2N6251 IC=10A;IB=1.67 A
2N6249 IC=10A;IB=1.0A
2N6250 IC=10A;IB=1.25 A
2N6251 IC=10A;IB=1.67 A
Collector-emitter
saturation voltage
VCE(sat)
1.5
Base-emitter
saturation voltage
VBE(sat)
2.25
V
Collector cut-off
current
VCE=RatedVCEV;VBE=-1.5V
TC=125ꢀ
5.0
10
ICEV
mA
mA
mA
2N6249 VCE=150V;IB=0
Collector cut-off
current
ICEO
5.0
2N6250 VCE=225V;IB=0
2N6251 VCE=300V;IB=0
VEB=6V; IC=0
IEBO
Emitter cut-off current
DC current gain
1.0
50
50
50
2N6249
10
8
hFE
IC=10A ; VCE=3V
2N6250
2N6251
6
fT
Transition frequency
IC=1A ; VCE=10Vꢀf=1MHz
2.5
5.8
MHz
A
Second breakdown collector current
With base forward biased
VCE=30V,t=1.0s,
Nonrepetitive
Is/b
Switching times
For 2N6249
IC=10A; IB1=-IB2=1.0A;VCC=200V
tr
Rise time
2.0
3.5
µs
µs
For 2N6250
IC=10A;IB1=-IB2=1.25A;VCC=200V
ts
Storage time
Fall time
tf
1.0
µs
For 2N6251
IC=10A;IB1=-IB2=1.67A;VCC=200V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6249 2N6250 2N6251
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
相关型号：
2N6253LEADFREE
Power Bipolar Transistor, 15A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL
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