首页 |元器件品牌

2N6253_12 [COMSET]

HIGH POWER SILICON NPN TRANSISTORS; 高功率硅NPN晶体管
2N6253_12
型号： 2N6253_12
厂家： COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述：

HIGH POWER SILICON NPN TRANSISTORS
高功率硅NPN晶体管

晶体 晶体管 高功率电源
文件： 总4页 (文件大小：88K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
NPN 2N6253 – 2N6254 – 2N6371  
HIGH POWER SILICON NPN TRANSISTORS  
The 2N6253, 2N6254, and 2N6371 are silicon transistors are mounted in TO-3 metal  
package.  
Tey are intended for a wide variety of high-power applications. The construction of these  
devices renders them highly resistant to second breakdown over a wide range of operating  
conditions.  
These devices differ in maximum ratings for voltage and power dissipation.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
45  
80  
40  
55  
100  
50  
55  
85  
45  
55  
90  
50  
5
VCEO(SUS) Collector-Emitter Voltage  
V
VCBO  
Collector-Base Voltage (*)  
V
V
V
V
Collector-Emitter Voltage  
RBE=100Ω  
VCER(SUS)  
VCEV(SUS)  
VEBO  
Collector-Emitter Voltage  
VBE=-1.5V  
7
5
Emitter-Base Voltage  
IC  
IB  
Collector Current  
Base Current  
15  
7
A
A
2N6253  
2N6254  
2N6371  
115  
150  
117  
< 25°C  
> 25°C  
Watts  
PTOT  
Power Dissipation  
Derate Linearly to 200°C  
TJ  
TS  
Junction Temperature  
Storage Temperature  
-65 to +200  
°C  
09/11/2012  
COMSET SEMICONDUCTORS  
1 | 4  
NPN 2N6253 – 2N6254 – 2N6371  
THERMAL CHARACTERISTICS  
Symbol  
RthJ-C  
Ratings  
Value  
Unit  
2N6253  
2N6254  
2N6371  
1.5  
1.17  
1.5  
Thermal Resistance, Junction to Case  
°C/W  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Symbol  
VCE(SAT)  
Ratings  
Test Condition(s)  
Min Typ Max Unit  
IC=3 A, IB=0.3 A  
IC=15 A, IB=5 A  
IC=5 A, IB=0.5 A  
IC=15 A, IB=3 A  
IC=8 A, IB=0.8 A  
IC=16 A, IB=4 A  
-
-
-
-
-
-
-
-
-
-
-
-
1
4
0.5  
4
1.5  
4
2N6253  
2N6254  
2N6371  
Collector-Emitter Voltage (*)  
V
2N6253  
2N6371  
2N6254  
2N6253  
2N6371  
2N6254  
Collector-Emitter Cutoff  
Current  
VCE=25 V  
VCE=60 V  
VEB=-5 V  
-
-
-
-
-
-
1.5  
1.0  
10  
ICEO  
mA  
mA  
IEBO  
Emitter-Base Cutoff Current  
VEB=-7 V  
0.5  
10  
VCE=40 V  
VBE=-1.5 V  
VCE=50 V  
VBE=-1.5 V  
VCE=100 V  
VBE=1.5 V  
VCE=45 V  
VBE=-1.5 V  
VCE=55 V  
VBE=-1.5 V  
VCE=100 V  
VBE=1.5 V  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
-
-
-
-
-
-
-
-
-
-
-
-
10  
5.0  
2.0  
2.0  
0.5  
ICEX  
Collector Cutoff Current  
mA  
09/11/2012  
COMSET SEMICONDUCTORS  
2 | 4  
NPN 2N6253 – 2N6254 – 2N6371  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Symbol  
VCEO(SUS)  
Ratings  
Test Condition(s)  
Min Typ Max Unit  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
45  
80  
40  
55  
85  
45  
55  
90  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Sustaining IC=0.2 A, IB=0 A  
Voltage (*)  
V
V
Collector-Emitter Sustaining  
Voltage (*)  
RBE=100Ω  
VCER(SUS)  
IC=0.2 mA  
IC=0.1 A  
VBE=-1.5 V  
VCEV(SUS) Base-Emitter Voltage (*)  
V
V
2N6371  
2N6253  
2N6254  
50  
-
-
-
20  
3
20  
5
15  
4
-
-
-
-
-
-
-
-
-
-
-
1.7  
1.5  
4
70  
-
70  
-
60  
-
VCE=4 V, IC=3 A  
VCE=2 V, IC=5 A  
VBE  
Base-Emitter Voltage (*)  
VCE=4 V, IC=16 A 2N6371  
VCE=4 V, IC=3 A  
VCE=4 V, IC=15 A  
2N6253  
VCE=2 V, IC=5 A  
VCE=4 V, IC=15 A  
Static Forward Current  
transfer ratio (*)  
hFE  
2N6254  
-
-
VCE=4 V, IC=8 A  
VCE=4 V, IC=16 A  
2N6371  
2N6253  
VCE=4 V, IC=1 A  
2N6254  
hfe  
Small Signal Current Gain  
Transition Frequency  
10  
-
-
f=1 kHz  
2N6371  
2N6253  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
fT  
VCE=4 V, IC=1 A  
VCE=45 V  
2N6254  
kHz  
A
2N6371 800  
2N6253 2.55  
2N6254 1.87  
Second Breakdown  
Collector Current  
tp=1s, non rep.  
Is/b  
VCE=40 V  
2N6371  
2.9  
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%  
09/11/2012  
COMSET SEMICONDUCTORS  
3 | 4  
NPN 2N6253 – 2N6254 – 2N6371  
MECHANICAL DATA CASE TO-3  
DIMENSIONS (mm)  
min  
typ  
max  
A
B
C
D
E
G
N
P
R
U
V
11  
-
-
-
-
-
-
-
-
-
-
-
13.10  
1.15  
1.65  
8.92  
22  
0.97  
1.5  
8.32  
19  
10.70  
16.50  
25  
11.1  
17.20  
27,20  
4.21  
40.13  
30.40  
3.84  
38.50  
29.90  
Pin 1 :  
Pin 2 :  
Case :  
Base  
Emitter  
Collector  
Revised October 2012  
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change  
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any  
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as  
critical components in life support devices or systems.  
www.comsetsemi.com  
0
info@comsetsemi.com  
4 | 4  
COMSET SEMICONDUCTORS  

相关型号：

2N6254

 BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO3 METAL PACKAGE
SEME-LAB

2N6254

 POWER TRANSISTORS TO-3 CASE
CENTRAL

2N6254

 Silicon NPN Power Transistors
ISC

2N6254

 Silicon NPN Power Transistors
SAVANTIC

2N6254

 Silicon NPN Power Transistors
JMNIC

2N6254

 HIGH POWER SILICON NPN TRANSISTORS
COMSET

2N6254

 HIGH-POWER SILICON N-P-N TRANSISTOR
NJSEMI

2N6254LEADFREE

 Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL

2N6255

 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MICROSEMI

2N6255

 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
ADPOW

2N6257

 High Power NPN Silicon Power Transistors
ONSEMI

2N6257

 Silicon NPN Power Transistors
ISC
©2020 ICPDF网 联系我们和版权申明