2N6253 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2N6253 |
厂家: | Savantic, Inc. |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:109K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6253
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Wide safe operating area
·High dissipation capability
APPLICATIONS
·Series and shunt regulators
·High fidelity amplifiers
·Power switching circuits
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
55
45
Open base
V
Open collector
5
V
15
A
IB
Base current
7
A
PD
Total Power Dissipation
Junction temperature
Storage temperature
TC=25ꢀ
115
200
-65~200
W
ꢀ
Tj
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.5
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6253
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBE
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=0.2A ;IB=0
45
IC=3A ;IB=0.3A
IC=15A ;IB=5A
IC=3A ; VCE=4V
VCE=25V; IB=0
1.0
4.0
1.7
1.5
V
V
V
ICEO
mA
mA
mA
VCE=55V; VBE=-1.5V
VCE=50V; VBE=-1.5V TC=150ꢀ
2.0
10.0
ICEX
IEBO
VEB=5V; IC=0
10
70
hFE-1
DC current gain
IC=3A ; VCE=4V
IC=15A ; VCE=4V
20
3
hFE-2
DC current gain
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6253
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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