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2N6253 [COMSET]

HIGH POWER SILICON NPN TRANSISTORS; 高功率硅NPN晶体管
2N6253
型号： 2N6253
厂家： COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述：

HIGH POWER SILICON NPN TRANSISTORS
高功率硅NPN晶体管

晶体 晶体管 高功率电源
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中文：  中文翻译
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2N6253 - 2N6254 - 2N6371  
HIGH POWER SILICON NPN TRANSISTORS  
The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide  
variety of high-power applications. The construction of these devices renders them  
highly resistant to second breakdown over a wide range of operating conditions.  
These devices differ in maximum ratings for voltage and power dissipation. All are  
supplied in JEDEC TO-3 hermetic steel packages.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
45  
80  
40  
55  
100  
50  
55  
85  
45  
55  
90  
50  
5
Collector-Emitter Voltage  
Collector-Base Voltage (*)  
VCEO(SUS)  
V
VCBO  
V
V
V
V
Collector-Emitter Voltage  
VCER(SUS)  
VCEV(SUS)  
VEBO  
RBE=100Ω  
Collector-Emitter Voltage  
VBE=-1.5V  
7
5
Emitter-Base Voltage  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
Collector Current  
Base Current  
15  
IC  
IB  
A
A
7
COMSET SEMICONDUCTORS  
1/4  
2N6253 - 2N6254 - 2N6371  
Symbol  
Ratings  
Value  
115  
150  
117  
Unit  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
< 25°C  
Watts  
Power Dissipation  
PTOT  
Derate Linearly to  
> 25°C  
200°C  
Junction Temperature  
Storage Temperature  
TJ  
TS  
2N6253  
2N6254  
2N6371  
-65 to +200  
°C  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
1.5  
1.17  
1.5  
Unit  
2N6253  
2N6254  
2N6371  
Thermal Resistance, Junction to Case  
RthJ-C  
°C/W  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Symbol  
VCE(SAT)  
Ratings  
Test Condition(s)  
Min Typ Mx Unit  
IC=3 A, IB=0.3  
-
-
-
-
-
-
-
-
-
-
-
-
1
2N6253  
2N6254  
2N6371  
IC=15 A, IB=5  
IC=5 A, IB=0.5  
IC=15 A, IB=3  
IC=8 A, IB=0.8  
IC=16 A, IB=4  
4
0.5  
4
Collector-Emitter Voltage (*)  
V
1.5  
4
2N6253  
2N6371  
2N6254  
2N6253  
2N6371  
2N6254  
Collector-Emitter Cutoff  
Current  
VCE=25 V  
VCE=60 V  
VEB=-5 V  
VEB=-7 V  
-
-
-
-
-
-
1.5  
1.0  
10  
mA  
mA  
ICEO  
IEBO  
Emitter-Base Cutoff Current  
0.5  
COMSET SEMICONDUCTORS  
2/4  
2N6253 - 2N6254 - 2N6371  
Symbol  
Ratings  
Test Condition(s)  
Min Typ Mx Unit  
VCE=40 V  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
-
-
-
-
-
-
-
-
-
-
-
-
10  
10  
VBE=-1.5 V  
VCE=50 V  
mA  
VBE=-1.5 V  
VCE=100 V  
VBE=1.5 V  
5.0  
2.0  
2.0  
0.5  
Collector Cutoff Current  
ICEX  
VCE=45 V  
VBE=-1.5 V  
VCE=55 V  
VBE=-1.5 V  
VCE=100 V  
BE=1.5 V  
V
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
45  
80  
40  
55  
85  
45  
55  
90  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Sustaining  
Voltage (*)  
IC=0.2 A, IB=0 A  
V
V
VCEO(SUS)  
Collector-Emitter Sustaining  
Voltage (*)  
IC=0.2 mA  
VCER(SUS)  
RBE=100Ω  
IC=0.1 A, VBE=-1.5  
V
Base-Emitter Voltage (*)  
Base-Emitter Voltage (*)  
V
V
VCEV(SUS)  
50  
-
-
VCE=4 V, IC=3 A  
VCE=2 V, IC=5 A  
VCE=4 V, IC=16 A  
VCE=4 V, IC=3 A  
VCE=4 V, IC=15 A  
VCE=2 V, IC=5 A  
VCE=4 V, IC=15 A  
VCE=4 V, IC=8 A  
VCE=4 V, IC=16 A  
-
-
-
-
-
-
-
-
-
-
-
-
1.7  
1.5  
4
VBE  
20  
3
70  
-
2N6253  
2N6254  
2N6371  
20  
5
70  
-
Static Forward Current  
transfer ratio (*)  
-
-
hFE  
15  
4
60  
-
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
2N6253  
2N6254  
2N6371  
VCE=4 V, IC=1 A,  
f=1 kHz  
Small Signal Current Gain  
Transition Frequency  
10  
-
-
hfe  
-
-
-
-
-
-
-
-
-
-
-
-
-
VCE=4 V, IC=1 A  
VCE=45 V  
-
kHz  
A
fT  
800  
2.55  
1.87  
2.9  
Second Breakdown  
Collector Current  
tp=1s, non rep.  
Is/b  
VCE=40 V  
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%  
COMSET SEMICONDUCTORS  
3/4  
2N6253 - 2N6254 - 2N6371  
MECHANICAL DATA CASE TO-3  
DIMENSIONS  
mm inches  
A
B
C
D
E
G
H
L
25,45  
38,8  
1
1,52  
30,09 1,184  
17,11  
9,78  
11,09  
8,33  
1,62  
19,43  
1
0,67  
0,38  
0,43  
0,32  
0,06  
0,76  
0,04  
0,16  
M
N
P
4,08  
Pin 1 :  
Pin 2 :  
Case :  
Base  
Emitter  
Collector  
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability  
for the consequences of use of such information nor for errors that could appear.  
Data are subject to change without notice  
COMSET SEMICONDUCTORS  
4/4  

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