CPH5605 [SANYO]
Ultrahigh-Speed Switching Applications; 超高速开关应用![CPH5605](http://pdffile.icpdf.com/pdf1/p00062/img/icpdf/CPH5605_323248_icpdf.jpg)
型号: | CPH5605 |
厂家: | ![]() |
描述: | Ultrahigh-Speed Switching Applications |
文件: | 总6页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Ordering number:ENN6441
N-Channel and P-Channel Silicon MOSFETs
CPH5605
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit:mm
· The CPH5605 incorporates an N-channel MOSFET
and a P-channel MOSFET that feature low ON
resistance and high-speed switching, thereby en-
abling high-density mounting.
2168
[CPH5605]
2.9
0.15
· 2.5V drive.
5
4
3
2
0.05
1
0.95
0.4
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Ratings
Parameter
Symbol
Conditions
Unit
N-channel
P-channel
Drain-to-Source Voltage
V
20
–20
V
V
DSS
Gate-to-Source Voltage
Drain Current (DC)
V
±10
1.4
5.6
±10
GSS
I
–1
A
D
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
–4
0.9
A
DP
P
D
Mounted on a ceramic board (600mm2×0.8mm) 1unit
W
Tch
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0
D GS
20
V
µA
µA
V
(BR)DSS
I
V
V
V
V
I
=20V, V =0
10
DSS
DS
GS
DS
DS
GS
I
=±8V, V =0
DS
=10V, I =1mA
D
=10V, I =700mA
D
±10
1.3
GSS
V
0.4
1.8
GS(off)
| yfs |
Forward Transfer Admittance
2.5
200
260
S
R
1
=700mA, V =4V
GS
260
360
mΩ
mΩ
DS(on)
DS(on)
D
Static Drain-to-Source On-State Resistance
R
2
I
=400mA, V =2.5V
GS
D
Marking : FE
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2490 No.6441-1/6
CPH5605
Continued from preceding page.
Ratings
typ
90
60
28
10
20
20
20
6
Parameter
Symbol
Conditions
Unit
min
max
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
Coss
Crss
V
V
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
t
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
d(on)
t
r
Turn-OFF Delay Time
Fall Time
t
d(off)
t
f
Qg
Total Gate Charge
Gate-to-Source Charge
V
V
V
=10V, V =10V, I =1.4A
GS
DS
DS
DS
D
Qgs
Qgd
=10V, V =10V, I =1.4A
GS
1
D
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
=10V, V =10V, I =1.4A
GS
2
D
V
I =1.4A, V =0
0.9
1.2
SD
S
GS
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=–1mA, V =0
GS
–20
V
µA
µA
V
(BR)DSS
D
I
V
V
V
V
I
=–20V, V =0
–10
±10
–1.4
DSS
DS
GS
DS
DS
GS
I
=±8V, V =0
DS
=–10V, I =–1mA
D
GSS
V
–0.4
1.0
GS(off)
| yfs |
Forward Transfer Admittance
=–10V, I =–500mA
1.4
420
630
100
60
S
D
R
1
=–500mA, V =–4V
GS
550
890
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS(on)
D
Static Drain-to-Source On-State Resistance
R
2
I
=–300mA, V =–2.5V
D GS
DS(on)
Ciss
Input Capacitance
V
V
V
=–10V, f=1MHz
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
=–10V, f=1MHz
DS
=–10V, f=1MHz
DS
25
t
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
10
d(on)
t
25
r
Turn-OFF Delay Time
Fall Time
t
27
d(off)
t
f
Qg
32
Total Gate Charge
V
V
V
=–10V, V =–10V, I =–1.0A
GS
=–10V, V =–10V, I =–1.0A
GS
=–10V, V =–10V, I =–1.0A
GS
5
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Qgs
Qgd
1
D
1
D
V
I =–1.0A, V =0
GS
–0.9
–1.5
SD
S
Electrical Connection
G1
S
G2
D1
D2
(Top view)
Switching Time Test Circuit
Switching Time Test Circuit
[P-channel]
[N-channel]
V
=10V
DD
V
=--10V
DD
V
V
IN
IN
4V
0V
0V
--4V
I
=700mA
L
I =--500mA
D
D
R =14.3Ω
R =20Ω
L
V
V
IN
IN
D
D
V
V
OUT
OUT
PW=10µs
D.C.≤1%
PW=10µs
D.C.≤1%
G
G
50Ω
50Ω
P.G
P.G
S
S
No.6441-2/6
CPH5605
[Nch]
I
-- V
I -- V
D DS
[Pch]
D
DS
2.0
1.8
1.6
1.4
1.2
--1.6
--1.4
--1.2
--1.0
--0.8
8.0V
6.0V
--8.0V
1.0
0.8
0.6
0.4
0.2
0
--2.0V
--0.6
--0.4
--0.2
0
V
=1.5V
GS
V
=--1.5V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, V
– V
Drain-to-Source Voltage, V
– V
DS
IT01074
IT00780
DS
I
-- V
[Nch]
I
-- V
GS
[Pch]
D
GS
D
4.0
3.5
3.0
2.5
2.0
1.5
1.0
--3.0
V
=10V
V
=--10V
DS
DS
--2.5
--2.0
--1.5
--1.0
--0.5
0
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Gate-to-Source Voltage, V
– V
Gate-to-Source Voltage, V
– V
IT01075
GS
IT00781
GS
[Nch]
[Pch]
R
(on) -- V
R
(on) -- V
DS
GS
DS
GS
1000
900
800
700
600
500
400
300
200
500
450
400
350
300
250
200
150
100
Ta=25°C
Ta=25°C
I =--0.3A
D
--0.5A
I =400mA
D
700mA
100
0
50
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
0
1
2
3
4
5
6
7
8
9
10
Gate-to-Source Voltage, V
– V
Gate-to-Source Voltage, V
– V
IT00782
[Pch]
GS
IT01076
GS
R (on) -- Ta
DS
[Nch]
R (on) -- Ta
DS
400
350
300
250
200
150
1000
900
800
700
600
500
400
300
200
100
50
0
100
0
--60 --40 --20
0
20
40
60
80 100 120 140 160
IT01077
--60 --40 --20
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta – °C
Ambient Temperature, Ta – °C
IT00783
No.6441-3/6
CPH5605
y
fs -- I
[Nch]
yfs -- I
[Pch]
D
D
10
10
V
=10V
V
=--10V
DS
DS
7
7
5
5
3
2
3
2
1.0
1.0
7
5
7
5
3
2
3
2
0.1
0.01
0.1
--0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--10
0.1
1.0
10
--0.1
--1.0
Drain Current, I – A
IT01078
Drain Current, I – A
IT00784
[Pch]
= 0
D
D
I
-- V
SD
[Nch]
I
-- V
F SD
F
10
7
5
--10
7
5
V
= 0
V
GS
GS
3
2
3
2
1.0
7
5
--1.0
3
2
7
5
0.1
7
5
3
2
3
2
--0.1
7
5
0.01
7
5
3
2
3
2
0.001
--0.01
0
0.3
0.6
0.9
1.2
1.5
0
3
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
Diode Forward Voltage, V
– V
Diode Forward Voltage, V
– V
SD
IT00785
IT01079
SD
SW Time -- I
SW Time -- I
[Nch]
[Pch]
D
D
1000
1000
V
V
=10V
=4V
7
5
7
5
V
V
=--10V
=--4V
DD
DD
GS
GS
3
2
3
2
t
r
100
100
7
5
7
5
t
f
t (off)
d
t
f
3
2
3
2
t (on)
d
10
10
t (on)
d
7
5
7
5
3
2
3
2
1.0
0.1
1.0
2
3
5
7
2
3
5
7
5
7
2
3
5
7
2
3
5
7
--10
1.0
10
--0.1
--1.0
Drain Current, I – A
IT01080
Drain Current, I – A
D
IT00786
D
Ciss, Coss, Crss -- V
[Nch]
Ciss, Coss, Crss -- V
[Pch]
DS
DS
1000
1000
f=1MHz
f=1MHz
7
7
5
5
3
2
3
2
Ciss
100
100
Ciss
Coss
7
5
7
5
Coss
3
2
3
2
Crss
Crss
10
10
--2
--4
--6
--8
--10 --12 --14 --16 --18 --20
0
2
4
6
8
10
12
14
16
18
20
IT01081
Drain-to-Source Voltage, V
– V
IT00787
Drain-to-Source Voltage, V
DS
– V
DS
No.6441-4/6
CPH5605
V
-- Qg
[Nch]
V
-- Qg
[Pch]
GS
GS
10
9
--10
--9
V
=10V
V
=--10V
DS
DS
I =1.4A
I =--1A
D
D
8
--8
7
--7
6
5
4
3
2
--6
--5
--4
--3
--2
1
0
--1
0
0
1
2
3
4
5
6
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Total Gate Charge, Qg – nC
IT01082
Total Gate Charge, Qg – nC
IT00788
A S O
[Nch]
100µs
[Pch]
A S O
10
7
5
--10
7
I
=5.6A
DP
I
=--4A
DP
5
100µs
3
2
3
2
I =1.4A
D
I =--1A
D
1.0
--1.0
7
5
7
5
3
2
Operation in
this area is
3
2
Operation in
this area is
limited by R (on).
DS
0.1
--0.1
limited by R (on).
DS
7
5
7
5
Ta=25°C
Ta=25°C
3
2
3
2
Single pulse
1 unit
Single pulse
1 unit
Mounted on a ceramic board (600mm2×0.8mm)
Mounted on a ceramic board (600mm2×0.8mm)
0.01
--0.01
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
2
3
5
0.1
1.0
10
--0.1
--1.0
--10
Drain-to-Source Voltage, V
– V
Drain-to-Source Voltage, V
– V
IT01083
IT00790
DS
DS
P
-- Ta
[Nch, Pch]
D
1.2
1.0
0.9
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
IT01084
Ambient Temperature, Ta – °C
No.6441-5/6
CPH5605
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6441-6/6
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