CPH5617 [SANYO]
General-Purpose Switching Device Applications; 通用开关设备的应用
| 型号： | CPH5617 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | General-Purpose Switching Device Applications |
| 文件： | 总7页 (文件大小：458K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN7370B
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH5617
Features
•
Low ON-resistance
•
Ultrahigh-speed switching
•
1.5V drive
•
Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
30
±10
150
600
0.25
150
DSS
V
V
GSS
I
mA
mA
W
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
≤ μ ≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
D
Tch
°C
Tstg
--55 to +150
°C
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: CPH5
7017A-004
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
0.15
0.05
2.9
CPH5617-TL-E
Packing Type : TL
Marking
5
4
3
2
TL
1
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
0.95
0.4
Electrical Connection
5
4
3
SANYO : CPH5
1
2
http://semicon.sanyo.com/en/network
71112 TKIM/N1109PE TKIM/90503 TSIM TA-3722
No.7370-1/7
CPH5617
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
V
μA
μA
V
(BR)DSS
D
GS
=30V, V =0V
I
I
V
V
V
V
10
DSS
DS
GS
DS
DS
GS
=±8V, V =0V
DS
±10
1.3
GSS
V
(off)
GS
=10V, I =100μA
0.4
D
Forward Transfer Admittance
| yfs |
=10V, I =80mA
0.15
0.22
2.9
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=80mA, V =4V
GS
3.7
5.2
Ω
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
=40mA, V =2.5V
GS
3.7
Ω
=10mA, V =1.5V
GS
6.4
12.8
Ω
Input Capacitance
Ciss
7.0
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=10V, f=1MHz
5.9
DS
2.3
t
t
t
t
(on)
19
d
r
65
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
155
120
1.58
0.26
0.31
0.87
d
f
Total Gate Charge
Qg
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=10V, V =10V, I =150mA
GS
D
V
SD
I =150mA, V =0V
S GS
1.2
Switching Time Test Circuit
V
=15V
DD
V
IN
4V
0V
I
=80mA
D
R =187.5Ω
L
V
D
V
OUT
IN
PW=10μs
D.C.≤1%
G
P.G
50Ω
CPH5617
S
Ordering Information
Device
Package
CPH5
Shipping
3,000pcs./reel
memo
CPH5617-TL-E
Pb Free
No.7370-2/7
CPH5617
I
D
-- V
I
D
-- V
GS
DS
0.30
0.25
0.20
0.15
0.10
0.16
V
=10V
DS
0.14
0.12
0.10
0.08
3.5V
4.0V
V
=1.5V
GS
0.06
0.04
0.05
0
0.02
0
0
0.5
1.0
1.5
2.0
2.5
3.0
IT00030
0
0.2
0.4
0.6
0.8
-- V
1.0
IT00029
Gate-to-Source Voltage, V
-- V
Drain-to-Source Voltage, V
GS
DS
R
(on) -- V
R
(on) -- I
DS D
DS
GS
10
7
10
9
Ta=25°C
V
=4V
GS
8
7
5
6
80mA
Ta=75°C
25°C
5
4
3
2
3
2
I
=40mA
D
--25°C
1
0
1.0
2
3
5
7
2
3
5
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
D
Gate-to-Source Voltage, V
-- V
Drain Current, I -- A
IT00032
IT00031
GS
R
(on) -- I
DS
R
(on) -- I
DS D
D
10
100
V
=1.5V
V
=2.5V
GS
GS
7
5
7
5
3
2
Ta=75°C
25°C
--25°C
10
3
2
Ta=75°C
--25°C
7
5
25°C
3
2
1.0
1.0
0.001
2
3
5
7
2
3
5
2
3
5
7
2
3
0.01
0.1
D
0.01
Drain Current, I -- A
Drain Current, I -- A
IT00033
IT00034
D
R
(on) -- Ta
yfs -- I
DS
D
1.0
7
V
=10V
DS
7
5
6
5
4
3
2
3
2
0.1
25°C
7
5
3
2
1
0
0.01
0.01
--60 --40 --20
0
20
40
60
80 100 120 140 160
2
3
5
7
2
3
5
0.1
Ambient Temperature, Ta -- °C
Drain Current, I -- A
IT00035
IT00036
D
No.7370-3/7
CPH5617
I
S
-- V
SW Time -- I
SD
D
1000
5
V
V
=15V
V
=0V
DD
=4V
GS
7
GS
3
2
5
3
2
0.1
100
7
5
7
5
3
2
3
2
t (on)
d
0.01
0.5
10
0.01
2
3
5
7
2
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT00037
0.1
Diode Forward Voltage, V
SD
-- V
IT00038
Drain Current, I -- A
D
Ciss, Coss, Crss -- V
V
-- Qg
DS
GS
100
10
f=1MHz
V
=10V
=150mA
DS
7
9
8
7
6
5
4
3
2
I
D
5
3
2
10
7
5
3
2
1
0
1.0
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IT00040
Drain-to-Source Voltage, V
-- V
IT00039
Total Gate Charge, Qg -- nC
DS
P
-- Ta
D
0.30
0.25
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Amibient Temperature, Ta -- °C
IT01962
No.7370-4/7
CPH5617
Embossed Taping Specification
CPH5617-TL-E
No.7370-5/7
CPH5617
Outline Drawing
Land Pattern Example
CPH5617-TL-E
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.6
0.95
0.95
No.7370-6/7
CPH5617
Note on usage : Since the CPH5617 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
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third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of July, 2012. Specifications and information herein are subject
to change without notice.
PS No.7370-7/7
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