2SJ466 [SANYO]
Ultrahigh-Speed Switching Applications; 超高速开关应用
| 型号： | 2SJ466 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | Ultrahigh-Speed Switching Applications |
| 文件： | 总4页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:ENN5491B
P-Channel Silicon MOSFET
2SJ466
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit:mm
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
2128
[2SJ466]
· Enables simplified fabrication, high-density mount-
ing, and miniaturization in end products due to the
surface mountable package.
8.2
7.8
6.2
3
0.6
1
2
0.3
0.6
1.0
2.54
1.0
2.54
5.08
7.8
10.0
6.0
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
V
–30
±20
–35
–140
50
V
V
DSS
Gate-to-Source Voltage
Drain Current (DC)
V
GSS
I
A
D
PW≤10µs, duty cycle≤1%
Tc=25˚C
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
A
DP
P
D
W
˚C
˚C
Tch
150
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
–30
max
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
V
I
I
=–1mA, V =0
D GS
V
V
(BR)DSS
(BR)GSS
=±100µA, V =0
±20
G
DS
I
V
V
V
V
I
=–30V, V =0
GS
=±16V, V =0
DS
–100
±10
µA
µA
V
DSS
DS
GS
DS
DS
I
GSS
V
(off)
=–10V, I =–1mA
D
=–10V, I =–18A
D
=–18A, V =–10V
GS
–1.0
16
–2.0
GS
| yfs |
Forward Transfer Admittance
27
S
20
30
30
40
mΩ
mΩ
D
Static Drain-to-Source ON-State Resistance
R
(on)
DS
I
=–18A, V =–4V
GS
D
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2368 No.5491–1/4
2SJ466
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
Coss
Crss
V
V
V
=–10V, f=1MHz
=–10V, f=1MHz
=–10V, f=1MHz
4000
2400
880
pF
pF
pF
ns
ns
ns
ns
V
DS
DS
DS
t
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
I =–35A, V =0
30
d(on)
t
200
r
Turn-OFF Delay Time
Fall Time
t
500
d(off)
t
f
270
Diode Forward Voltage
V
–1.0
–1.5
SD
S
GS
Switching Time Test Circuit
V
=--30V
DD
V
in
I
=--18A
D
0V
--10V
R =1.67Ω
L
V
OUT
V
in
D
P
=10µs
W
D.C.≤1%
G
P. G
2SJ466
50Ω
S
I
-- V
I
-- V
GS
D
DS
D
--70
--60
--50
--40
--30
--20
--70
--60
--50
--40
--30
--20
V =--10V
DS
--4.0V
--3.5V
25°C
--3.0V
--2.5V
--10
0
--10
0
0
--2
--4
--6
--8
--10
0
--1
--2
--3
--4
--5
--6
IT00682
Drain-to-Source Voltage, V
DS
– V
Gate-to-Source Voltage, V
– V
GS
IT00681
yfs -- I
R (on) -- V
DS GS
D
100
60
50
40
30
20
V
=--10V
Tc=25°C
I =--18A
DS
7
5
D
3
2
25°C
10
7
5
3
2
10
0
1.0
0
--2
--4
--6
--8
--10
--12
--14
IT00684
3
5
7
2
3
5
7
2
3
5
7
--1.0
--100
IT00683
Drain Current, I--10– A
Gate-to-Source Voltage, V – V
GS
D
No.5491–2/4
2SJ466
R (on) -- Tc
DS
Ciss, Coss, Crss -- V
DS
60
50
40
30
20
2
f=1MHz
10000
7
5
Ciss
3
2
1000
7
5
3
2
10
0
100
7
5
--80
--40
0
40
80
120
160
IT00685
0
--5
--10
--15
--20
--25
--30
IT00686
Case Temperature, Tc – ˚C
Drain-to-Source Voltage, V
– V
DS
SW Time -- I
A S O
D
2
3
2
V
V
=--30V
=--10V
DD
GS
I
=--140A
DP
1000
--100
7
5
7
5
I =--35A
D
3
2
3
2
tf
Operation in
this area is
100
--10
7
5
7
5
limited by R (on).
DS
td(on)
3
2
3
2
Tc=25°C
--1.0
7
Single pulse
10
3
5
7
2
3
5
7
2
3
5
3
5
7
2
3
5
7
2
3
5
--1.0
--10
--1.0
--10
Drain Current, I – A
Drain-to-Source Voltage, V
– V
D
DS
IT00687
IT00688
P
-- Tc
D
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc – ˚C
IT00689
No.5491–3/4
2SJ466
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.5491–4/4
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