2SJ471 [HITACHI]

Silicon P Channel DV-L MOS FET High Speed Power Switching; 硅P通道DV -L MOS FET高速电源开关


型号：	2SJ471
厂家：	HITACHI SEMICONDUCTOR
描述：	Silicon P Channel DV-L MOS FET High Speed Power Switching 硅P通道DV -L MOS FET高速电源开关开关电源开关
文件：	总10页 (文件大小：49K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2SJ471

Silicon P Channel DV–L MOS FET

High Speed Power Switching

ADE-208-540

1st. Edition

Features

•

Low on-resistance

R_DS(on)= 25 mΩ typ.

4V gate drive devices.

High speed switching

•

Outline

TO–220CFM

1. Gate

2. Drain

3. Source

2SJ471

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_DSS

Ratings

–30

Unit

Drain to source voltage

Gate to source voltage

Drain current

V_GSS

I_D

±20

–30

Note1

Drain peak current

I_D(pulse)

–120

–30

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

I_DR

Pch ^Note2

°C

Tch

150

Tstg

–55 to +150

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

2SJ471

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V_(BR)DSS

–30

—

I_D= –10mA, V_GS= 0

I_G= ±100µA, V_DS= 0

V_DS= –30 V, V_GS= 0

Gate to source breakdown

voltage

V_(BR)GSS

I_DSS

±20

—

Zero gate voltege drain

current

—

–10

µA

Gate to source leak current

I_GSS

—

–1.0

—

±10

–2.0

—

µA

V_GS= ±16V, V_DS= 0

I_D= –1mA, V_DS= –10V

I_D= –15A, V_GS= –10V^Note3

I_D= –15A, V_GS= –4V^Note3

I_D= –15A, V_DS= –10V^Note3

V_DS= –10V

Gate to source cutoff voltage V_GS(off)

Static drain to source on state R_DS(on)

—

mΩ

resistance

R_DS(on)

Forward transfer admittance |y_fs|

Input capacitance

Output capacitance

Ciss

1700

950

260

—

Coss

—

V_GS= 0

Reverse transfer capacitance Crss

—

f = 1MHz

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

—

V_GS= –10V, I_D= –15A

R_L= 0.67Ω

290

170

130

–1.1

—

Turn-off delay time

Fall time

—

Body to drain diode forward

voltage

V_DF

—

I_F= –30A, V_GS= 0

Body to drain diode reverse

recovery time

t_rr

—

I_F= –30A, V_GS= 0

diF/ dt = 50A/µs

Note: 3. Pulse test

2SJ471

Main Characteristics

Power vs. Temperature Derating

Maximun Safe Operation Area

–500

–200

–100

10 µs

–50

–20

–10

–5

Operation in

this area is

–2

–1

limited by R

DS(on)

Ta = 25 °C

–1

–0.5

–3

–30

100

150

200

–0.1 –0.3

–10

–100

Drain to Source Voltage V

(V)

Case Temperature Tc (°C)

Typical Output Characteristics

Typical Transfer Characteristics

–10 V –6 V

–50

–40

–30

–20

–10

–50

–40

–30

–20

–10

–5 V

–4.5 V

–4 V

Tc = –25°C

75°C

–3.5 V

25°C

–3 V

= –2.5 V

= –10 V

Pulse Test

–8 –10

–1

–2

–3

–4

–5

–2

–4

–6

Gate to Source Voltage V

(V)

Drain to Source Voltage V

(V)

2SJ471

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Drain Current

0.5

–1.0

–0.8

–0.6

–0.4

–0.2

Pulse Test

0.2

0.1

= –20 A

0.05

= –4 V

–10 V

–10 A

–5 A

0.02

0.01

–8

–4

–12

–16

–20

(V)

–1

–2

–5

–10 –20

–50

Drain Current I (A)

Gate to Source Voltage V

Static Drain to Source on State Resistance

vs. Temperature

0.10

Foward Transfer Admittance vs.

Drain Current

Tc = –25 °C

0.08

0.06

0.04

0.02

= –20 A

25 °C

75 °C

= –4 V

–5, –10 A

0.5

–5, –10, –20 A

Pulse Test

–10 V

= –10 V

0.2

0.1

Pulse Test

–0.5

–40

120

160

–0.2

–0.1

–1 –2 –5 –20

–50

–10

Drain Current I (A)

Cate Temperature Tc (°C)

2SJ471

Typical Capacitance vs.

Drain to Source Voltage

Body to Drain Diode Reverse

Recovery Time

10000

5000

1000

500

200

100

2000

1000

Ciss

Coss

Crss

–16

500

200

100

di / dt = 50 A / µs

= 0

= 0, Ta = 25 °C

f = 1 MHz

–0.5

–0.2

–0.1

–1 –2 –5

–20

–50

–4

–8

–12

–20

(V)

–10

Drain to Source Voltage V

Reverse Drain Current I

(A)

Dynamic Input Characteristics

Switching Characteristics

1000

500

–10

–20

–30

= –5 V

–10 V

–25 V

–4

d(off)

200

100

–8

–12

= –25 V

–10 V

–5 V

d(on)

–40

–50

–16

–20

= –10 V, V

= –10 V

= –30 A

duty < 1 %

–0.1

–0.5

–0.2

–1 –2 –5

–20

–50

–10

Drain Current I (A)

Gate Charge Qg (nc)

2SJ471

Reverse Drain Current vs.

Source to Drain Voltage

–50

–40

–30

–20

–10

Pulse Test

–10 V

–5 V

= 0, 5 V

–0.4

–0.8 –1.2 –1.6

–2.0

(V)

Source to Drain Voltage V

Normalized Transient Thermal Impedance vs. Pulse Width

Tc = 25°C

D = 1

0.5

0.3

0.1

ch – c(t) = s (t) • ch – c

ch – c = 4.17 °C/W, Tc = 25 °C

D =

0.03

0.01

10 µ

100 µ

1 m

10 m

Pulse Width PW (S)

100 m

2SJ471

Switching Timen Test Circuit

Waveform

Vout

Monitor

Vin Monitor

Vin

10%

D.U.T.

90%

Vin

10 V

90%

10%

50Ω

= –10 V

10%

Vout

td(off)

td(on)

2SJ471

Package Dimensions

Unit: mm

2.7 ± 0.2

10.0 ± 0.3

3.2 ± 0.2

1.0 ± 0.2

4.45 ± 0.3

2.5 ± 0.2

1.15 ± 0.2

0.6 ± 0.1

2.54 ± 0.5

0.7 ± 0.1

TO–220CFM

Hitachi Code

EIAJ

—

JEDEC

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Electronic components Group

Dornacher Stra§e 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

2SJ471 [HITACHI]

相关型号：

2SJ471-E

2SJ472-01

2SJ472-01L

2SJ472-01L_06

2SJ472-01S

2SJ473-01

2SJ473-01L

2SJ473-01L_06

2SJ473-01S

2SJ474-01

2SJ474-01L

2SJ474-01L_05