2SC5551A_12 [SANYO]
High-Frequency Medium-Output Amplifier Applications; 高频介质输出放大器的应用
| 型号： | 2SC5551A_12 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | High-Frequency Medium-Output Amplifier Applications |
| 文件： | 总6页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1118A
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
High-Frequency Medium-Output
Amplifier Applications
2SC5551A
Features
•
High f : (f =3.5GHz typ)
T
T
•
•
Large current : (I =300mA)
C
Large allowable collector dissipation (1.3W max)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
40
30
CBO
V
V
CEO
V
2
V
EBO
I
C
300
600
1.3
150
mA
mA
W
Collector Current (Pulse)
Collector Dissipation
I
CP
P
When mounted on ceramic substrate (250mm2 0.8mm)
×
C
Junction Temperature
Storage Temperature
Tj
C
C
°
°
Tstg
--55 to +150
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: PCP
7007B-004
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
•
Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SC5551AE-TD-E
2SC5551AF-TD-E
4.5
1.6
Packing Type: TD
Marking
1.5
TD
RANK
1
2
3
0.4
0.5
0.4
1.5
3.0
Electrical Connection
2
0.75
1
3
1 : Base
2 : Collector
3 : Emitter
Bottom View
SANYO : PCP
http://www.sanyosemi.com/en/network/
80812 TKIM/D0209AB TKIM TC-00002042
No. A1118-1/6
2SC5551A
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.0
Collector Cutoff Current
Emitter Cutoff Current
I
V
V
=20V, I =0A
E
A
A
μ
μ
CBO
CB
I
=1V, I =0A
5.0
EBO
EB
C
h
h
1
2
V
=5V, I =50mA
90
20
270
FE
FE
CE
C
DC Current Gain
V
CE
=5V, I =300mA
C
Gain-Bandwidth Product
f
V
=5V, I =50mA
3.5
GHz
pF
pF
V
T
CE C
Output Capacitance
Cob
Cre
2.9
1.5
4.0
V
CB
=10V, f=1MHz
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
V
(sat)
(sat)
I
C
=50mA, I =5mA
0.07
0.8
0.3
1.2
CE
B
V
I
C
=50mA, I =5mA
V
BE
B
: The 2SC5551A is classified by 50mA h as follows :
*
FE
Rank
E
F
h
90 to 180
135 to 270
FE
Ordering Information
Device
2SC5551AE-TD-E
2SC5551AF-TD-E
Package
PCP
Shipping
memo
1,000pcs./reel
1,000pcs./reel
Pb Free
PCP
I
C
-- V
h
FE
-- I
CE
C
1000
100
80
V
=5V
CE
7
5
3
2
60
100
7
5
40
3
2
100μA
50μA
I =0μA
20
0
B
10
0
4
20
2
3
5
7
2
3
5
7
2
3
5
7
8
12
16
1000
IT01067
1.0
10
100
IT01066
Collector Current, I -- mA
Collector-to-Emitter Voltage, V
CE
-- V
C
No. A1118-2/6
2SC5551A
2
V
(sat) -- I
S21e
-- I
⏐
⏐
CE
C
C
7
5
20
18
16
14
I
/ I =10
B
C
V
=5V
CE
3
2
12
10
8
0.1
7
5
6
4
3
2
2
0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
100
1.0
10
100
1000
IT01069
Collector Current, I -- mA
IT15252
Collector Current, I -- mA
C
C
Cob, Cre -- V
CB
f
T
-- I
C
10
10
f=1MHz
V
=5V
CE
7
7
5
5
3
2
1.0
3
2
7
5
3
2
1.0
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
100
IT01070
1.0
10
100
1000
IT01071
Collector-to-Base Voltage, V
-- V
Collector Current, I -- mA
CB
C
A S O
P
-- Ta
C
1.4
1000
When mounted on ceramic substrate
I
=600mA
7
1.3
1.2
CP
(250mm2✕0.8mm)
5
I =300mA
C
3
2
1.0
0.8
100
7
5
0.6
0.4
3
2
0.2
0
Ta=25°C
Single pulse
When mounted on ceramic substrate (250mm2✕0.8mm)
10
1.0
2
3
5
80
120
140
160
0
20
40
60
100
2
3
5
7
10
IT01072
Ambient Temperature, Ta -- °C
IT01073
Collector-to-Emitter Voltage, V
CE
-- V
No. A1118-3/6
2SC5551A
Bag Packing Specification
2SC5551AE-TD-E, 2SC5551AF-TD-E
No. A1118-4/6
2SC5551A
Outline Drawing
Land Pattern Example
2SC5551AE-TD-E, 2SC5551AF-TD-E
Mass (g) Unit
Unit: mm
0.058
mm
* For reference
2.2
45°
45°
1.0
1.0
1.5
3.0
No. A1118-5/6
2SC5551A
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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mentioned above.
This catalog provides information as of August, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1118-6/6
相关型号：
2SC5557
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, SSSMINI3-F1, 3 PIN
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