2SC5554 [RENESAS]
Silicon NPN Epitaxial VHF / UHF wide band amplifier; NPN硅外延VHF / UHF宽带放大器
| 型号： | 2SC5554 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Epitaxial VHF / UHF wide band amplifier |
| 文件： | 总10页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1, 2003
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2SC5554
Silicon NPN Epitaxial
VHF / UHF wide band amplifier
ADE-208-692 (Z)
1st. Edition
Nov. 1998
Features
•
•
Super compact package;
(1.4 × 0.8 × 0.59mm)
Capable low voltage operation ;
(VCE = 1V)
Outline
M
1
2
1. Emitter
2. Base
3. Collector
Note: Marking is “Y
2SC5554
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
15
9
V
1.5
V
20
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
Pc
80
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol
ICBO
Min
—
Typ
—
Max
10
tions
0
RBE = ∞
.5V , IC = 0
E = 1V , IC = 5mA
VCB = 1V , IE = 0
f = 1MHz
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
ICEO
—
—
IEBO
—
—
hFE
50
—
1
Collector output capacitance Cob
Gain bandwidth product
Power gain
fT
Hz
dB
VCE = 1V , IC = 5mA
VCE = 1V, IC = 5mA
f = 900MHz
PG
Noise figure
3
dB
VCE = 1V, IC = 5mA
f = 900MHz
2SC5554
DC Current Transfer Ratio vs.
Collector Current
Maximum Collector Dissipation Curve
200
100
0
160
120
80
V
= 1 V
CE
40
0
50
100
150
200
50
(mA)
100
20
C
Ambient Temperature Ta (°C)
Collector Output Capacita
Collector to Base V
Gain Bandwidth Product vs.
Collector Current
1.0
0.8
0.6
0.4
0.2
0
8
V
= 1 V
CE
6
4
2
0
0.2
0.5
2
0.1
1
10
5
10
20
1
2
5
50 100
Collector Current I (mA)
Collector to Base Voltage V
(V)
C
CB
2SC5554
Power Gain vs. Collector Current
= 1 V
Noise Figure vs. Collector Current
= 1 V
20
16
12
8
5
4
3
2
1
0
V
V
CE
CE
f = 900MHz
f = 900MHz
4
0
1
2
5
20
10
50 100
(mA)
50
A)
100
1
Collector Current I
C
S
21
Parameter vs. Collector C
20
16
12
8
4
0
2
5
20
1
10
100
50
(mA)
Collector Current I
C
2SC5554
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
Scale: 4 / div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
4
150°
.2
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–.6
–1.5
–.8
–1
mA
Condition : V
= 1 V , I = 5mA
C
CE
100 to 2000 MHz (100 MHz step)
Hz step)
S12 Parameter vs. Frequency
eter vs. Frequency
Scale: 0.
1
90°
.8
1.5
60
120°
2
3
150°
4
5
0
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
180°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–120°
–.6
–1.5
–.8
–1
Condition :
Condition :
V
V
= 1 V , I = 5mA
C
= 1 V , I = 5mA
C
C
CE
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
2SC5554
Sparameter (VCE = 1V, IC = 5mA, Zo = 50Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
–25.4
MAG
13.06
11.47
9.74
8.28
7.08
6.16
5.43
4.84
4.37
3.99
3.66
3.38
3.15
2.96
2.78
2.64
2.50
ANG
161.3
144.2
131.0
121.3
113.7
108.1
103.1
99.3
MAG
ANG
76.6
65.6
58.4
54.6
52.4
51.8
51.7
52.1
52
8.8
59.2
59.6
60.1
MAG
0.947
0.828
0.697
0.587
0.501
0.433
180
0.166
0.151
0.137
0.126
0.113
0.102
ANG
100
200
0.715
0.647
0.559
0.501
0.453
0.416
0.393
0.378
0.369
0.357
0.361
0.358
0.358
0.362
0.362
0.369
0.373
0.377
0.388
0.395
0.0279
0.0517
0.0681
0.0798
0.0882
0.0955
0.102
0.109
0.115
0.122
0.128
0.
191
–16.1
–30.2
–40.4
–47.0
–51.3
–54.3
–56.2
–57.3
8.0
8.6
–58.5
–58.0
–58.0
–57.2
–56.9
–56.6
–56.4
–56.2
–55.7
–50.1
–71.5
300
400
–88.2
500
–102.5
–114.8
–125.4
–134.4
–142.8
–149.5
–156.6
–162.2
–167.5
–172.5
–177.3
178.8
600
700
800
900
95.7
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
92.5
89.7
87.2
84.9
82.7
8
174.7
171.1
168.3
165.
2SC5554
Package Dimensions
Unit: mm
1.4±0.05
0.6 max.
+ 0.1
– 0.05
0.15
+ 0.1
0.2
– 0.05
3
1
2
+ 0.1
– 0.05
+ 0.1
– 0.05
0.2
0.2
0.45 0.45
0.9 ±0.1
MFPAK
—
achi Code
EIAJ
—
JEDEC
2SC5554
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. Hitachi bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact
Hitachi’s sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transporttraffic, safety equipment
or medical equipment for life support.
4. Design your application so that the product is used within the ranges hi particularly for
maximum rating, operating supply voltage range, heat radiation chonditions and
other characteristics. Hitachi bears no responsibility for failure the guaranteed
ranges. Even within the guaranteed ranges, consider normaailure modes in
semiconductor devices and employ systemic measures sipment incorporating
Hitachi product does not cause bodily injury, fire or oto operation of the
Hitachi product.
5. This product is not designed to be radiation re
6. No one is permitted to reproduce or duplicart of this document without
written approval from Hitachi.
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Semiconductor & IC Div.
Nippon Bldg., 2-6-2, OhJapan
Tel: Tokyo (03) 3270
URL
NorthAme
Europe
.hitachi.com/
i-eu.com/hel/ecg
Asia (Singapo
Asia (Taiwan)
.hitachi.com.sg/grp3/sicd/index.htm
tachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) .hitachi.com.hk/eng/bo/grp3/index.htm
Japan
w.hitachi.co.jp/Sicd/indx.htm
For further information write to
Hitachi Semiconductor
(America) Inc.
Hitachi EuropGmbH
Electronic components Group
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Tel: <852> (2) 735 9218
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Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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