2SC5552 [PANASONIC]
Silicon NPN triple diffusion mesa type(For horizontal deflection output); 硅NPN三重扩散台面型（水平偏转输出）
| 型号： | 2SC5552 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
| 文件： | 总1页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC5552
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
15.5±±.5
3.±±±.3
φ 3.2±±.1
5°
5°
I Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
5°
5°
5°
(4.±)
2.±±±.2
• Wide area of safe operation (ASO)
1.1±±.1
±.7±±.1
I Absolute Maximum Ratings TC = 25°C
5.45±±.3
1±.9±±.5
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
ICP
Rating
Unit
V
Collector to base voltage
Collector to emitter voltage
1 700
5°
1
2
3
1 700
V
1: Base
2: Collector
3: Emitter
600
V
Emitter to base voltage
Peak collector current
Collector current
Base current
7
V
TOP-3E Package
30
A
Marking Symbol: C5552
Internal Connection
IC
16
A
IB
8
65
A
TC = 25°C
Ta = 25°C
PC
W
Collector power
dissipation
C
3.5
Junction temperature
Storage temperature
Tj
150
°C
°C
B
Tstg
−55 to +150
E
I Electrical Characteristics TC = 25°C 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
50
1
Unit
µA
Collector cutoff current
ICBO
VCB = 1 000 V, IE = 0
VCB = 1 700 V, IE = 0
VEB = 7 V, IC = 0
mA
µA
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
IEBO
hFE
50
12
3
VCE = 5 V, IC = 8 A
6
VCE(sat)
VBE(sat)
fT
IC = 8 A, IB = 2 A
V
V
IC = 8 A, IB = 2 A
1.5
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
IC = 8 A, Resistance loaded
IB1 = 2 A, IB2 = −4 A
3
MHz
µs
Storage time
tstg
3.0
0.2
Fall time
tf
µs
1
相关型号：
2SC5557
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, SSSMINI3-F1, 3 PIN
PANASONIC
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