2SC5554 [HITACHI]
Silicon NPN Epitaxial VHF / UHF wide band amplifier; NPN硅外延VHF / UHF宽带放大器
| 型号： | 2SC5554 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Epitaxial VHF / UHF wide band amplifier |
| 文件： | 总8页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5554
Silicon NPN Epitaxial
VHF / UHF wide band amplifier
ADE-208-692 (Z)
1st. Edition
Oct. 1998
Features
•
•
Super compact package;
(1.4 × 0.8 × 0.59mm)
Capable low voltage operation ;
(VCE = 1V)
Outline
MFPAK
3
1
2
1. Emitter
2. Base
3. Collector
Note: Marking is “YH-”.
2SC5554
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
15
9
V
1.5
V
20
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
Pc
80
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol
ICBO
Min
—
Typ
—
Max
10
Unit
Test Conditions
VCB = 15V , IE = 0
VCE = 9V , RBE = ∞
VEB = 1.5V , IC = 0
VCE = 1V , IC = 5mA
VCB = 1V , IE = 0
f = 1MHz
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
µA
mA
µA
V
ICEO
—
—
1
IEBO
—
—
10
hFE
50
—
120
0.6
250
0.9
Collector output capacitance Cob
pF
Gain bandwidth product
Power gain
fT
3.5
9
7
—
—
GHz
dB
VCE = 1V , IC = 5mA
VCE = 1V, IC = 5mA
f = 900MHz
PG
12
Noise figure
NF
—
1.4
3
dB
VCE = 1V, IC = 5mA
f = 900MHz
2
2SC5554
DC Current Transfer Ratio vs.
Collector Current
Maximum Collector Dissipation Curve
200
100
0
160
120
80
V
= 1 V
CE
40
0
50
100
150
200
50
(mA)
100
2
5
10
20
1
Collector Current I
C
Ambient Temperature Ta (°C)
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
1.0
0.8
0.6
0.4
0.2
0
10
8
I
= 0
E
V
= 1 V
CE
f = 1MHz
6
4
2
0
0.2
0.5
2
0.1
1
10
5
10
20
1
2
5
50 100
Collector Current I (mA)
Collector to Base Voltage V
(V)
C
CB
3
2SC5554
Power Gain vs. Collector Current
= 1 V
Noise Figure vs. Collector Current
= 1 V
20
16
12
8
5
4
3
2
1
0
V
V
CE
CE
f = 900MHz
f = 900MHz
4
0
1
2
5
20
10
50 100
(mA)
50
(mA)
100
2
5
10
20
1
Collector Current I
Collector Current I
C
C
S
21
Parameter vs. Collector Current
20
16
12
8
V
= 1 V
CE
f = 1GHz
4
0
1
2
5
20
10
100
50
Collector Current I
(mA)
C
4
2SC5554
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
Scale: 4 / div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
4
150°
.2
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–120°
–.6
–1.5
–.8
–1
–90°
Condition :
V
= 1 V , I = 5mA
C
Condition : V
= 1 V , I = 5mA
C
CE
CE
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
Scale: 0.04 / div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
150°
4
.2
0
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–120°
–.6
–1.5
–.8
–1
–90°
Condition :
Condition :
V
V
= 1 V , I = 5mA
C
= 1 V , I = 5mA
C
CE
CE
100 to 2000 MHz (100 MHz step)
100 to 2000 MHz (100 MHz step)
5
2SC5554
Sparameter (VCE = 1V, IC = 5mA, Zo = 50Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
–25.4
MAG
13.06
11.47
9.74
8.28
7.08
6.16
5.43
4.84
4.37
3.99
3.66
3.38
3.15
2.96
2.78
2.64
2.50
2.38
2.28
2.18
ANG
161.3
144.2
131.0
121.3
113.7
108.1
103.1
99.3
MAG
ANG
76.6
65.6
58.4
54.6
52.4
51.8
51.7
52.1
52.7
53.5
54.2
55.1
56.0
56.9
57.2
58.1
58.8
59.2
59.6
60.1
MAG
0.947
0.828
0.697
0.587
0.501
0.433
0.378
0.333
0.295
0.266
0.240
0.217
0.199
0.180
0.166
0.151
0.137
0.126
0.113
0.102
ANG
100
200
0.715
0.647
0.559
0.501
0.453
0.416
0.393
0.378
0.369
0.357
0.361
0.358
0.358
0.362
0.362
0.369
0.373
0.377
0.388
0.395
0.0279
0.0517
0.0681
0.0798
0.0882
0.0955
0.102
0.109
0.115
0.122
0.128
0.135
0.141
0.148
0.155
0.163
0.169
0.177
0.183
0.191
–16.1
–30.2
–40.4
–47.0
–51.3
–54.3
–56.2
–57.3
–58.0
–58.4
–58.6
–58.5
–58.0
–58.0
–57.2
–56.9
–56.6
–56.4
–56.2
–55.7
–50.1
–71.5
300
400
–88.2
500
–102.5
–114.8
–125.4
–134.4
–142.8
–149.5
–156.6
–162.2
–167.5
–172.5
–177.3
178.8
600
700
800
900
95.7
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
92.5
89.7
87.2
84.9
82.7
80.9
78.6
174.7
77.2
171.1
75.1
168.3
73.3
165.3
71.8
6
2SC5554
Package Dimensions
As of January, 2001
Unit: mm
1.4 ± 0.05
+0.1
+0.1
3-0.2
0.15
–0.05
-0.05
0.45
0.45
0.9 ± 0.1
Hitachi Code
JEDEC
MFPAK
—
EIAJ
—
Mass (reference value)
0.0016 g
7
2SC5554
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
D-85622 Feldkirchen, Munich
World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
8
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