RSX501L-20_11 [ROHM]
Schottky barrier Diode; 肖特基二极管
| 型号： | RSX501L-20_11 |
| 厂家： | 
ROHM |
| 描述： | Schottky barrier Diode |
| 文件： | 总4页 (文件大小：1003K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Schottky barrier Diode
RSX501L-20
Applications
Dimensions(Unit : mm)
Land size figure (Unit : mm)
General rectification
2.0
2.6±0.2
Features
1) Small power mold type. (PMDS)
2) Low VF, Low IR.
5
7
0.1±0.02
ꢀꢀꢀ 0.1
①
②
3) High reliability.
PMDS
2.0±0.2
1.5±0.2
Construction
Silicon epitaxial planar
Structure
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture Date
Taping specifications(Unit : mm)
2.0±0.05
4.0±0.1
0.3
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings(Ta=25°C)
Parameter
Limits
25
Symbol
VRM
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
VR
20
V
Average rectified forward current
Forward current surge peak (60Hz・1cyc)(*1)
Junction temperature
5
Io
IFSM
A
70
A
125
Tj
°C
°C
Storage temperature
40 to 125
Tstg
(*1)Tc=90°C max Mounted on epoxy board. 180°Half sine wave
Electrical characteristics(Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
0.39
500
Unit
V
Conditions
VF
IR
-
-
-
-
IF=3.0A
VR=20V
Reverse current
μA
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.05 - Rev.D
Data Sheet
RSX501L-20
10
1000000
100000
10000
1000
100
1000
100
10
Ta=125℃ Ta=75℃
Ta=125℃
f=1MHz
1
0.1
Ta=25℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=-25℃
0.01
0.001
10
1
0
100
200
300
400
500
600
0
5
10
15
20
25
30
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1050
1040
1030
1020
1010
1000
990
1000
900
800
700
600
500
400
300
200
100
0
380
370
360
350
340
330
Ta=25℃
f=1MHz
VR=0V
Ta=25℃
IF=3A
n=30pcs
Ta=25℃
VR=20V
n=30pcs
n=10pcs
980
AVE:997.4pF
970
AVE:350.0mV
960
AVE:196.8uA
950
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
30
25
20
15
10
5
300
250
200
150
100
50
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Ifsm
1cyc
8.3ms
Ifsm
250
200
150
100
50
8.3ms 8.3ms
1cyc
AVE:186.0A
AVE:11.6ns
0
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
trr DISPERSION MAP
IFSM DISRESION MAP
300
250
200
150
100
50
1000
100
10
5
4
3
2
1
0
Mounted on epoxy board
Ifsm
Rth(j-a)
t
D=1/2
DC
Sin(θ＝180)
Rth(j-c)
IF=1A
IM=100mA
1
1ms time
300us
0.1
0
0.001 0.01
0.1
1
10
100 1000
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.05 - Rev.D
Data Sheet
RSX501L-20
15
10
5
15
10
5
5
4
3
2
1
0
Io
Io
0A
0V
0A
0V
VR
VR
t
t
D=t/T
VR=10V
Tj=125℃
D=t/T
VR=10V
Tj=125℃
DC
T
T
D=1/2
DC
DC
Sin(θ＝180)
D=1/2
Sin(θ＝180)
D=1/2
Sin(θ＝180)
30
0
0
0
10
20
0
25
50
75
100
125
0
25
50
75
100
125
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating Curve(Io-Tc)
30
25
20
15
10
5
No break at 30kV No break at 30kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.05 - Rev.D
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
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