RSX501LA-20_09 [ROHM]
Schottky barrier diode; 肖特基二极管
| 型号： | RSX501LA-20_09 |
| 厂家： | 
ROHM |
| 描述： | Schottky barrier diode |
| 文件： | 总4页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky barrier diode
RSX501LA-20
zApplications
zDimensions (Unit : mm)
zLand size figure (Unit : mm)
General rectification
2.0
zFeatures
1) Small and Thin power mold
type (PMDT)
2) High reliability.
3) Low IR
zStructure
Silicon epitaxial planar
PMDＴ
ROHM : PMDＴ
zStructure
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.1
ꢀꢀꢀꢀꢀ
0.25±0.05
0
φ1.55±0.1
ꢀꢀꢀꢀꢀ
0
4.0±0.1
2.7±0.1
1.25±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
Unit
V
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
VRM
VR
25
20
Average rectified forward current (*1)
Forward current surge peak （60Hz・1cyc）
Junction temperature
5.0
Io
IFSM
Tj
A
70
125
-40 to +125
A
℃
℃
Storage temperature
Tstg
(*1) Alumina substrate at the time of assemble, Tc=90 max.
℃
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Conditions
Symbol
Min.
Typ.
Max.
0.39
500
Unit
V
VF
IR
-
-
-
-
IF=3.0A
VR=20V
Reverse current
µA
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2009.10 - Rev.A
1/3
c
○ 2009 ROHM Co., Ltd. All rights reserved.
RSX501LA-20
Data Sheet
zElectrical characteristic curves
10
1000000
100000
10000
1000
100
1000
100
10
Ta=125℃ Ta=75℃
Ta=125℃
f=1MHz
1
Ta=25℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.1
0.01
Ta=-25℃
10
0.001
1
0
100
200
300
400
500
600
0
5
10
15
20
25
30
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1050
1040
1030
1020
1010
1000
990
1000
900
800
700
600
500
400
300
200
100
0
380
370
360
350
340
330
Ta=25℃
f=1MHz
VR=0V
Ta=25℃
IF=3A
n=30pcs
Ta=25℃
VR=20V
n=30pcs
n=10pcs
980
AVE:997.4pF
970
AVE:350.0mV
960
AVE:196.8uA
950
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
30
25
20
15
10
5
300
250
200
150
100
50
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Ifsm
1cyc
Ifsm
250
200
150
100
50
8.3ms 8.3ms
1cyc
8.3ms
AVE:186.0A
AVE:11.6ns
0
0
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
300
250
200
150
100
50
1000
100
10
5
4
3
2
1
0
Mounted on epoxy board
Ifsm
Rth(j-a)
t
D=1/2
DC
Sin(θ＝180)
Rth(j-c)
IF=1A
IM=100mA
1
1ms time
300us
0.1
0
0.001
0.1
10
1000
1
10
100
0
2
4
6
8
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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2009.10 - Rev.A
2/3
c
○ 2009 ROHM Co., Ltd. All rights reserved.
RSX501LA-20
Data Sheet
15
10
5
15
10
5
5
4
3
2
1
0
Io
Io
0A
0V
0A
0V
VR
VR
t
t
D=t/T
D=t/T
DC
VR=10V
Tj=125℃
VR=10V
Tj=125℃
T
T
D=1/2
DC
DC
Sin(θ＝180)
D=1/2
Sin(θ＝180)
D=1/2
Sin(θ＝180)
30
0
0
0
10
20
0
25
50
75
100
125
0
25
50
75
100
125
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating Curve(Io-Tc)
30
25
20
15
10
5
No break at 30kV No break at 30kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
www.rohm.com
2009.10 - Rev.A
3/3
c
○ 2009 ROHM Co., Ltd. All rights reserved.
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R0039
A
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