RSY160P05TL [ROHM]
Power Field-Effect Transistor, 16A I(D), 45V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TCPT, DPAK-3;
| 型号： | RSY160P05TL |
| 厂家： | 
ROHM |
| 描述： | Power Field-Effect Transistor, 16A I(D), 45V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TCPT, DPAK-3 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RSY160P05
Transistors
4V Drive Pch MOSFET
RSY160P05
zDimensions (Unit : mm)
zStructure
Silicon P-channel MOSFET
TCPT
(2)
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Same land pattern as CPT3 (D-PAK).
(1)
(3)
zApplication
Switching
zPackaging specifications
zEquivalent circuit
Package
Taping
TL
∗1
Type
Code
Basic ordering unit (pieces)
2500
RSY160P05
∗2
(1)
(2)
(3)
(1) Gate
(2) Drain
(3) Source
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Limits
Unit
V
VDSS
VGSS
ID
−45
20
V
Continuous
Pulsed
16
32
A
Drain current
∗1
IDP
A
IS
A
Continuous
Pulsed
−16
−32
20
Source current
(Body diode)
∗1
∗2
ISP
A
PD
W
°C
°C
Total power dissipation
Channel temperature
Tch
Tstg
150
Range of Storage temperature
−55 to +150
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Tc=25°C
zThermal resistance
Parameter
Symbol
Limits
6.25
Unit
∗
Channel to ambient
Rth (ch-c)
°C / W
∗
Tc=25°C
1/5
RSY160P05
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
Unit
Gate-source leakage
IGSS
−
−
−
−
10
−
µA VGS
=
20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −45
Zero gate voltage drain current
V
ID= −1mA, VGS=0V
µA VDS= −45V, VGS=0V
VDS= −10V, ID= −1mA
IDSS
−
−1
−2.5
50
63
70
−
−
−
−
−
Gate threshold voltage
VGS (th) −1.0
−
V
−
−
−
35
45
50
−
2150
250
150
13
30
90
105
mΩ ID= −16A, VGS= −10V
mΩ ID= −8A, VGS= −4.5V
mΩ ID= −8A, VGS= −4.0V
Static drain-source on-state
resistance
∗
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
8.5
S
VDS= −10V, ID= −8A
VDS= −10V
VGS=0V
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
Coss
Crss
td (on)
f=1MHz
∗
∗
∗
∗
∗
∗
∗
I
V
V
R
R
D
= −10A
DD −25V
t
r
−
−
−
GS= −10V
td (off)
tf
Turn-off delay time
Fall time
L
=2.5Ω
=10Ω
G
ID= −10A
Total gate charge
Gate-source charge
Qg
17.0 25.5
nC VDD −25V
nC VGS= −5V
Qgs
Qgd
−
−
5.2
5.5
−
−
RL=2.5Ω
RG
=10Ω
Gate-drain charge
nC
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max.
Conditions
IS= −16A, VGS=0V
Unit
V
∗
VSD
−
−
−1.2
∗Pulsed
2/5
RSY160P05
Transistors
zElectrical characteristic curves
16
14
12
10
8
16
100
10
Ta=25°C
Pulsed
Ta=25°C
Pulsed
VDS= -10V
14
12
10
8
Pulsed
-10V
-4.0V
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
-10V
-6.0V
-4.5V
-4.0V
1
-3.0V
6
6
-3.0V
4
-2.8V
4
0.1
0.01
VGS= -2.5V
2
2
VGS= -2.5V
0
0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.0
2.0
3.0
4.0
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.2 Typical Output Characteristics( )
Ⅱ
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.3 Typical Transfer Characteristics
Fig.1 Typical Output Characteristics(
)
Ⅰ
1000
1000
100
10
1000
100
10
Ta=25°C
Pulsed
VGS= -10V
VGS= -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Pulsed
VGS= -4.0V
VGS= -4.5V
VGS= -10V
100
10
0.1
1
10
100
0.1
1
10
100
0.1
1
10
100
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( )
Ⅲ
)
)
Ⅱ
Ⅰ
100
10
1
1000
100
10
100
10
VGS= -4.0V
Pulsed
VGS=0V
Pulsed
VDS= -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0
0.1
1
10
100
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.7 Static Drain-Source On-State
Fig.8 Forward Transfer Admittance vs.
Drain Current
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Resistance vs. Drain Current(
)
Ⅳ
3/5
RSY160P05
Transistors
10000
1000
100
10
200
160
120
80
10
8
Ta=25°C
Ta=25°C
Pulsed
V
V
DD= -25V
GS= -10V
tf
td(off)
RG=10Ω
ID= -16A
Pulsed
6
4
Ta=25°C
V
DD= -25V
ID= -10A
RG=10Ω
Pulsed
40
2
ID= -8A
td(on)
tr
1
0
0
0
0.01
0.1
1
10
100
5
10
15
0
5
10
15
20
25
30
GATE-SOURCE VOLTAGE : -VGS[V]
DRAIN-CURRENT : -ID[A]
Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source
10000
1000
100
Ciss
Crss
Coss
Ta=25°C
f=1MHz
VGS=0V
10
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : -VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
4/5
RSY160P05
Transistors
zMeasurement circuits
Pulse Width
10%
V
GS
ID
V
DS
VGS
50%
90%
50%
RL
D.U.T.
10%
10%
RG
V
DD
90%
tr
90%
V
DS td(on)
td(off)
tf
t
on
toff
Fig.14 Switching Time Test Circuit
Fig.15 Switching Time Waveforms
V
G
V
GS
ID
V
DS
Q
g
RL
V
GS
D.U.T.
I
G (Const.)
Q
gs
Qgd
RG
V
DD
Charge
Fig.16 Gate Charge Test Circuit
Fig.17 Gate Charge Waveform
5/5
Appendix
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM
CO.,LTD.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you
wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account when
designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no respon-
sibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples of
application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or
exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility
whatsoever for any dispute arising from the use of such technical information.
The Products specified in this document are intended to be used with general-use electronic equipment or
devices (such as audio visual equipment, office-automation equipment, communication devices, electronic
appliances and amusement devices).
The Products are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or
malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the
possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as
derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your
use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or system
which requires an extremely high level of reliability the failure or malfunction of which may result in a direct
threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment,
aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no
responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended
to be used for any such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may be controlled under
the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
THE AMERICAS / EUROPE / ASIA / JAPAN
ROHM Customer Support System
Contact us : webmaster@ rohm.co.jp
www.rohm.com
TEL : +81-75-311-2121
FAX : +81-75-315-0172
Copyright © 2008 ROHM CO.,LTD.
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
Appendix1-Rev3.0
相关型号：
©2020 ICPDF网 联系我们和版权申明