RSX501LA-20 [ROHM]

Schottky barrier diode; 肖特基二极管
RSX501LA-20
型号: RSX501LA-20
厂家: ROHM    ROHM
描述:

Schottky barrier diode
肖特基二极管

整流二极管 肖特基二极管 光电二极管
文件: 总4页 (文件大小:172K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RSX501LA-20  
Diodes  
Schottky barrier diode  
RSX501LA-20  
zApplications  
zExternal dimensions (Unit : mm)  
zLand size figure (Unit : mm)  
General rectification  
2.0  
zFeatures  
1) Small and Thin power mold  
type (PMDT)  
2) High reliability.  
3) Low I  
R
zStructure  
Silicon epitaxial planar  
PMDT  
ROHM : PMDT  
zStructure  
zTaping dimensions (Unit : mm)  
2.0±0.05  
4.0±0.1  
φ1.55±0.1  
ꢀꢀꢀꢀꢀ  
0.25±0.05  
0
φ1.55±0.1  
ꢀꢀꢀꢀꢀ  
0
4.0±0.1  
2.7±0.1  
1.25±0.1  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
Symbol  
VRM  
VR  
Unit  
V
V
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
25  
20  
Average rectified forward current (*1)  
Forward current surge peak 60Hz1cyc)  
Junction temperature  
5.0  
Io  
IFSM  
Tj  
A
70  
125  
-40 to +125  
A
Storage temperature  
Tstg  
(*1) Alumina substrate at the time of assemble, Tc=90max.  
zElectrical characteristic (Ta=25°C)  
Parameter  
Forward voltage  
Reverse current  
Conditions  
Symbol  
Min.  
Typ.  
Max.  
0.39  
500  
Unit  
VF  
IR  
-
-
-
-
V
IF=3.0A  
VR=20V  
µA  
1/3  
RSX501LA-20  
Diodes  
zElectrical characteristic curves  
10  
1000000  
100000  
10000  
1000  
100  
1000  
100  
10  
Ta=125℃ Ta=75℃  
Ta=125℃  
f=1MHz  
1
Ta=25℃  
Ta=75℃  
Ta=25℃  
Ta=-25℃  
0.1  
0.01  
Ta=-25℃  
10  
0.001  
1
0
100  
200  
300  
400  
500  
600  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
FORWARD VOLTAGE:VF(mV)  
VF-IF CHARACTERISTICS  
REVERSE VOLTAGE:VR(V)  
VR-IR CHARACTERISTICS  
1050  
1040  
1030  
1020  
1010  
1000  
990  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
380  
370  
360  
350  
340  
330  
Ta=25℃  
f=1MHz  
VR=0V  
Ta=25℃  
IF=3A  
n=30pcs  
Ta=25℃  
VR=20V  
n=30pcs  
n=10pcs  
980  
AVE:997.4pF  
970  
AVE:350.0mV  
960  
AVE:196.8uA  
950  
VF DISPERSION MAP  
IR DISPERSION MAP  
Ct DISPERSION MAP  
300  
30  
25  
20  
15  
10  
5
300  
250  
200  
150  
100  
50  
Ta=25℃  
IF=0.5A  
IR=1A  
Irr=0.25*IR  
n=10pcs  
Ifsm  
1cyc  
Ifsm  
250  
200  
150  
100  
50  
8.3ms 8.3ms  
1cyc  
8.3ms  
AVE:186.0A  
AVE:11.6ns  
0
0
0
1
10  
100  
NUMBER OF CYCLES  
IFSM-CYCLE CHARACTERISTICS  
trr DISPERSION MAP  
IFSM DISRESION MAP  
300  
250  
200  
150  
100  
50  
1000  
100  
10  
5
4
3
2
1
0
Mounted on epoxy board  
Ifsm  
Rth(j-a)  
t
D=1/2  
DC  
Sin(θ=180)  
Rth(j-c)  
IF=1A  
IM=100mA  
1
1ms time  
300us  
0.1  
0
0.001  
0.1  
10  
1000  
1
10  
100  
0
2
4
6
8
10  
TIME:t(ms)  
IFSM-t CHARACTERISTICS  
AVERAGE RECTIFIED  
FORWARD CURRENT:Io(A)  
Io-Pf CHARACTERISTICS  
TIME:t(s)  
Rth-t CHARACTERISTICS  
2/3  
RSX501LA-20  
Diodes  
15  
10  
5
15  
10  
5
5
4
3
2
1
Io  
Io  
0A  
0V  
0A  
0V  
VR  
VR  
t
t
D=t/T  
VR=10V  
Tj=150℃  
D=t/T  
VR=10V  
Tj=150℃  
DC  
T
T
D=1/2  
DC  
DC  
Sin(θ=180)  
D=1/2  
Sin(θ=180)  
D=1/2  
25  
Sin(θ=180)  
30  
0
0
0
0
10  
20  
0
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
REVERSE VOLTAGE:VR(V)  
VR-PR CHARACTERISTICS  
AMBIENT TEMPERATURE:Ta(℃)  
Derating Curve゙(Io-Ta)  
CASE TEMPARATURE:Tc(℃)  
Derating Curve(Io-Tc)  
30  
25  
20  
15  
10  
5
No break at 30kV  
No break at 30kV  
0
C=200pF  
R=0Ω  
C=100pF  
R=1.5kΩ  
ESD DISPERSION MAP  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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