RRS090N03TB [ROHM]
Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8;
| 型号： | RRS090N03TB |
| 厂家： | 
ROHM |
| 描述： | Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RRS090N03
Transistors
4V Drive Nch MOSFET
RRS090N03
zStructure
zDimensions (Unit : mm)
Silicon N-channel MOSFET
SOP8
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
zApplication
Each lead has same dimensions
Switching
zPackaging specifications
zEquivalent circuit
(8) (7) (6) (5)
(8)
(7)
(6)
(5)
Package
Taping
TB
Type
Code
Basic ordering unit (pieces)
2500
∗
2
(1) (2) (3) (4)
RRS090N03
∗
1
(1) Source
(2) Source
(3) Source
(4) Gate
(1)
(2)
(3)
(4)
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗1 ESD Protection Diode.
∗2 Body Diode.
∗
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
Limits
Unit
V
VDSS
30
V
GSS
20
V
Continuous
I
D
9
A
Drain Current
∗
1
Pulsed
I
DP
36
1.6
A
Continuous
Pulsed
I
s
A
Source Current
(Body Diode)
∗1
2
I
sp
36
A
∗
Total Power Dissipation
Channel Temperature
P
D
2.0
W
°C
°C
Tch
150
Range of Storage Temperature
Tstg
−55 to +150
∗1 Pw≤10µs, Duty cycle≤1%
∗
2 Mounted on a ceramic board.
zThermal resistance
Parameter
Symbol
Limits
62.5
Unit
∗
Channel to Ambient
Rth (ch-a)
°C / W
∗
Mounted on a ceramic board.
1/4
RRS090N03
Transistors
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min.
Typ.
Max.
±10
Unit
µA
V
Test Conditions
GS=±20V, VDS=0V
Gate-source leakage
I
GSS
(BR)DSS
DSS
GS (th)
V
I
D=1mA, VGS=0V
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
V
30
I
1
2.5
19
V
V
DS=30V, VGS=0V
µA
DS=10V, I =1mA
D
V
1.0
V
14
17
18
I
I
D
=9A, VGS=10V
=9A, VGS=4.5V
Static drain-source on-starte
resistance
∗
D
RDS (on)
23
mΩ
I
I
D
=9A, VGS=4.0V
=9A, VDS=10V
DS=10V
24.5
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l ∗
6
S
D
C
iss
oss
rss
1450
190
140
15
38
48
14
12
4
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
V
C
GS=0V
f=1MHz
C
∗
t
d(on)
I
D=4.5A, VDD 15V
∗
∗
V
GS=10V
t
r
Turn-off delay time
Fall time
t
d
(off)
RL=3.33Ω
RG=10Ω
∗
∗
∗
∗
t
f
Total gate charge
Gate-source charge
Q
g
18
ID=9A,
V
DD 15V
V
GS=5V
Q
gs
gd
Gate-drain charge
Q
3
RL=1.67Ω, RG=10Ω
∗Pulsed
zBody diode characteristics (Source-Drain) (Ta = 25°C)
Parameter
Forward Voltage
Symbol Min.
Typ.
Max.
1.2
Unit
V
Test Conditions
=9A, VGS=0V
∗
−
−
V
SD
I
s
∗Pulsed
2/4
RRS090N03
Transistors
zElectrical characteristic curves
1000
100
100
100
Ta=25°C
V
DS
=
10V
V
GS
=
10V
Pulsed
Pulsed
Pulsed
10
Ta=125°C
75°C
25°C
−25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
V
GS=4.0V
1
V
GS=4.5V
0.1
VGS=10V
10
1
0.01
0.001
10
0.01
0.1
1
10
100
1.0
1.5
2.0
2.5
3.0
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : VGS(V)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I (A)
D
Fig.2 Static Drain-Source
On-State Resistance vs.
Fig.1 Typical Transfer Characteristics
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Gate-Source Voltage(
)
1000
1000
100
50
Ta=25°C
Pulsed
V
GS
=
4.5V
V
GS=4V
Pulsed
Pulsed
40
30
20
10
0
I =9A
D
100
Ta=125°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
Ta=75°C
Ta=25°C
Ta=−25°C
ID=4.5A
10
1
10
1
5
10
15
0
0.01
0.1
1
10
100
0.01
0.1
1
10
100
DRAIN CURRENT : I
D(A)
DRAIN CURRENT : I (A)
D
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static Drain-Source
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙΙ)
Fig.5 Static Drain-Source
On-State Resistance
vs. Drain Current (
On-State Resistance vs.
Gate-Source Voltage
)
10000
10000
100
10
Ta=25
f=1MHz
GS=0V
°C
Ta=25°C
V
DS
=
10V
V
V
DD=15V
GS=10V
Pulsed
V
R =10Ω
G
1000
100
t
f
Ciss
Pulsed
1000
t
d(off)
t
d(on)
t
r
Coss
Ta=−25°C
Ta=25°C
Ta=75°C
Ta=125°C
100
10
1
Crss
10
1
0.1
0.01
0.01
0.1
1
10
(A)
100
0.01
0.1
1
10
100
0.1
1
10
100
DRAIN CURRENT : I
D
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : I
D(A)
Fig.9 Switching Characteristics
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
Fig.7 Forward Transfer Admittance
vs. Drain Current
3/4
RRS090N03
Transistors
100
10
10
V
GS
=
0V
Ta=25°C
Pulsed
V
DD=15V
I
R
D
=9A
Ta=−25°C
25°C
G
=10Ω
Pulsed
75°C
125°C
1
5
0.1
0.01
0
0
0
0.5
1.0
1.5
5
10
15
20
25
30
TOTAL GATE CHANGE: Qg(nC)
SOURCE-DRAIN VOLTAGE : VSD(V)
Fig.11 Source Current vs.
Source-Drain Voltage
Fig.10 Dynamic Input Characteristics
zMeasurement circuit
Pulse Width
90%
V
GS
ID
V
DS
50%
10%
50%
V
GS
DS
RL
V
10%
10%
D.U.T.
RG
V
DD
90%
90%
t
d(on)
td(off)
t
r
tr
t
on
t
off
Fig.13 Switching Time Waveforms
Fig.12 Switching Time Test Circuit
V
G
V
GS
ID
V
DS
Q
g
RL
V
GS
I
G (Const.)
D.U.T.
Q
gs
Qgd
RG
V
DD
Charge
Fig.14 Gate Charge Test Circuit
Fig.15 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Copyright © 2008 ROHM CO.,LTD.
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Appendix1-Rev2.0
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